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Results: 1-15 |
Results: 15

Authors: Peng, LSJ Wang, WZ Jo, W Ohnishi, T Marshall, AF Hammond, RH Beasley, MR Peterson, EJ Ericson, RE
Citation: Lsj. Peng et al., In situ high rate growth of high temperature superconductor tapes, IEEE APPL S, 11(1), 2001, pp. 3375-3378

Authors: Jo, W
Citation: W. Jo, Structural and ferroelectric properties of Bi4Ti3O12 thin films on IrO2 prepared by rf magnetron sputtering, APPL PHYS A, 72(1), 2001, pp. 81-84

Authors: Jo, W Peng, LSJ Wang, W Ohnishi, T Marshall, AF Hammond, RH Beasley, MR Peterson, EJ
Citation: W. Jo et al., Thermodynamic stability and kinetics of Y-Ba-Cu-O film growth at high rates in atomic and molecular oxygen, J CRYST GR, 225(2-4), 2001, pp. 183-189

Authors: Noh, TW Hyun, SJ Park, BH Bu, SD Lee, JS Jo, W
Citation: Tw. Noh et al., Epitaxial Sr-Bi-Ta oxide films of cubic fluorite-like structure, J ELECTROCE, 4(2-3), 2000, pp. 273-278

Authors: Yun, Z Jo, W Yi, Y Choi, S Choi, E Min, K
Citation: Z. Yun et al., Effects of sludge settling characteristics in the BNR system, WATER SCI T, 42(3-4), 2000, pp. 283-288

Authors: Jo, W Kim, DC Hong, JW
Citation: W. Jo et al., Reverse-poling effects on charge retention in Pb(Zr,Ti)O-3(001)/LaNiO3(001) heterostructures, APPL PHYS L, 76(3), 2000, pp. 390-392

Authors: Jung, MC Kim, HD Han, M Jo, W Kim, DC
Citation: Mc. Jung et al., X-ray photoelectron spectroscopy study of Pt-oxide thin films deposited byreactive sputtering using O-2/Ar gas mixtures, JPN J A P 1, 38(8), 1999, pp. 4872-4875

Authors: Jo, W Cho, SM Lee, HM Kim, DC Bu, JU
Citation: W. Jo et al., Effect of oxygen to argon ratio on growth of Bi4Ti3O12 thin films on Ir and IrO2 prepared by radio-frequency magnetron sputtering, JPN J A P 1, 38(5A), 1999, pp. 2827-2830

Authors: Kim, DC Nam, HJ Jo, W Lee, HM Cho, SM Bu, JU Kang, HB
Citation: Dc. Kim et al., Integration of a split word line ferroelectric memory using a novel etching technology, INTEGR FERR, 27(1-4), 1999, pp. 1323-1334

Authors: Park, BH Hyun, SJ Bu, SD Noh, TW Lee, JC Kim, HD Kim, TH Jo, W
Citation: Bh. Park et al., Stability of metal-oxygen octahedra in bi-layered perovskite materials, J KOR PHYS, 35, 1999, pp. S100-S103

Authors: Jo, W Kim, DC Lee, HM Kim, KY
Citation: W. Jo et al., Structural and electrical properties of Ba0.5Sr0.5TiO3 thin films on Pt/Tiand Pt/RuO2, J KOR PHYS, 34(1), 1999, pp. 61-64

Authors: Park, BH Kang, BS Bu, SD Noh, TW Lee, J Jo, W
Citation: Bh. Park et al., Lanthanum-substituted bismuth titanate for use in non-volatile memories, NATURE, 401(6754), 1999, pp. 682-684

Authors: Bu, SD Park, BH Kang, BS Kang, SH Noh, TW Jo, W
Citation: Sd. Bu et al., Influence of the laser fluence on the electrical properties of pulsed-laser-deposited SrBi2Ta2O9 thin films, APPL PHYS L, 75(8), 1999, pp. 1155-1157

Authors: Hong, JW Jo, W Kim, DC Cho, SM Nam, HJ Lee, HM Bu, JU
Citation: Jw. Hong et al., Nanoscale investigation of domain retention in preferentially oriented PbZr0.53Ti0.47O3 thin films on Pt and on LaNiO3, APPL PHYS L, 75(20), 1999, pp. 3183-3185

Authors: Park, BH Hyun, SJ Bu, SD Noh, TW Lee, J Kim, HD Kim, TH Jo, W
Citation: Bh. Park et al., Differences in nature of defects between SrBi2Ta2O9 and Bi4Ti3O12, APPL PHYS L, 74(13), 1999, pp. 1907-1909
Risultati: 1-15 |