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Results: 1-9 |
Results: 9
Improvement of the accuracy of the in-situ ellipsometric measurements of temperature and alloy composition for MBE grown HgCdTe LWIR/MWIR structures
Authors: Daraselia, M Garland, JW Johs, B Nathan, V Sivananthan, S
Citation: M. Daraselia et al., Improvement of the accuracy of the in-situ ellipsometric measurements of temperature and alloy composition for MBE grown HgCdTe LWIR/MWIR structures, J ELEC MAT, 30(6), 2001, pp. 637-642
Dielectric function spectra of GaN, AlGaN, and GaN/AlGaN heterostructures
Authors: Wagner, J Obloh, H Kunzer, M Maier, M Kohler, K Johs, B
Citation: J. Wagner et al., Dielectric function spectra of GaN, AlGaN, and GaN/AlGaN heterostructures, J APPL PHYS, 89(5), 2001, pp. 2779-2785
Spectroscopic ellipsometry analysis of InGaN/GaN and AlGaN/GaN heterostructures using a parametric dielectric function model
Authors: Wagner, J Ramakrishnan, H Obloh, H Kunzer, C Kohler, K Johs, B
Citation: J. Wagner et al., Spectroscopic ellipsometry analysis of InGaN/GaN and AlGaN/GaN heterostructures using a parametric dielectric function model, MRS I J N S, 5, 2000, pp. NIL_667-NIL_672
Closed-loop control of resonant tunneling diode barrier thickness using insitu spectroscopic ellipsometry
Authors: Roth, JA Williamson, WS Chow, DH Olson, GL Johs, B
Citation: Ja. Roth et al., Closed-loop control of resonant tunneling diode barrier thickness using insitu spectroscopic ellipsometry, J VAC SCI B, 18(3), 2000, pp. 1439-1442
Piezoelectric field and confinement effects on the dielectric function spectrum of InGaN/GaN quantum wells
Authors: Ramakrishnan, A Wagner, J Kunzer, M Obloh, H Kohler, K Johs, B
Citation: A. Ramakrishnan et al., Piezoelectric field and confinement effects on the dielectric function spectrum of InGaN/GaN quantum wells, APPL PHYS L, 76(1), 2000, pp. 79-81
Use of spectroscopic ellipsometry for feedback control during the growth of thin AlAs layers
Authors: Beaudoin, M Johnson, SR Boonzaayer, MD Zhang, YH Johs, B
Citation: M. Beaudoin et al., Use of spectroscopic ellipsometry for feedback control during the growth of thin AlAs layers, J VAC SCI B, 17(3), 1999, pp. 1233-1236
Integrated multi-sensor system for real-time monitoring and control of HgCdTe MBE
Authors: Olson, GL Roth, JA Brewer, PD Rajavel, RD Jamba, DM Jensen, JE Johs, B
Citation: Gl. Olson et al., Integrated multi-sensor system for real-time monitoring and control of HgCdTe MBE, J ELEC MAT, 28(6), 1999, pp. 749-755
Real-time control of the MBE growth of InGaAs on InP
Authors: Roth, JA Chow, DH Olson, GL Brewer, PD Williamson, WS Johs, B
Citation: Ja. Roth et al., Real-time control of the MBE growth of InGaAs on InP, J CRYST GR, 202, 1999, pp. 31-35
MBE growth of HgCdTe avalanche photodiode structures for low-noise 1.55 mum photodetection
Authors: de Lyon, TJ Baumgratz, B Chapman, G Gordon, E Hunter, AT Jack, M Jensen, JE Johnson, W Johs, B Kosai, K Larsen, W Olson, GL Sen, M Walker, B Wu, OK
Citation: Tj. De Lyon et al., MBE growth of HgCdTe avalanche photodiode structures for low-noise 1.55 mum photodetection, J CRYST GR, 202, 1999, pp. 980-984
Risultati: 1-9 |