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Results:
1-17
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Results: 17
Authors:
Joshi, RP
Hu, Q
Aly, R
Schoenbach, KH
Hjalmarson, HP
Citation: Rp. Joshi et al., Self-consistent simulations of electroporation dynamics in biological cells subjected to ultrashort electrical pulses - art. no. 011913, PHYS REV E, 6401(1), 2001, pp. 1913
Authors:
Jasper, WJ
Joshi, RP
Citation: Wj. Jasper et Rp. Joshi, Control of a batch dyeing process with three acid dyes, TEXT RES J, 71(1), 2001, pp. 57-62
Authors:
Li, T
Joshi, RP
del Rosario, RD
Fazi, C
Citation: T. Li et al., Monte Carlo based analysis of intermodulation distortion behavior in GaN-AlxGa1-xN high electron mobility transistors for microwave applications, J APPL PHYS, 90(6), 2001, pp. 3030-3037
Authors:
Kayasit, P
Joshi, RP
Islam, NE
Schamiloglu, E
Gaudet, J
Citation: P. Kayasit et al., Transient and steady state simulations of internal temperature profiles inhigh-power semi-insulating GaAs photoconductive switches, J APPL PHYS, 89(2), 2001, pp. 1411-1417
Authors:
Schoenbach, KH
Joshi, RP
Stark, RH
Dobbs, FC
Beebe, SJ
Citation: Kh. Schoenbach et al., Bacterial decontamination of liquids with pulsed electric fields, IEEE DIELEC, 7(5), 2000, pp. 637-645
Authors:
Joshi, RP
Schoenbach, KH
Citation: Rp. Joshi et Kh. Schoenbach, Electroporation dynamics in biological cells subjected to ultrafast electrical pulses: A numerical simulation study, PHYS REV E, 62(1), 2000, pp. 1025-1033
Authors:
Joshi, RP
Heatley, FW
Citation: Rp. Joshi et Fw. Heatley, Measurement of coronal plane patellar mobility in normal subjects, KNEE SURG S, 8(1), 2000, pp. 40-45
Authors:
Isam, NE
Schamiloglu, E
Schoenberg, JSH
Joshi, RP
Citation: Ne. Isam et al., Compensation mechanisms and the response of high resistivity GaAs photoconductive switches during high-power applications, IEEE PLAS S, 28(5), 2000, pp. 1512-1519
Authors:
Damayanthi, P
Joshi, RP
McAdoo, JA
Citation: P. Damayanthi et al., Calculations of hole transport characteristics in bulk GaSb with comparisons to GaAs, J APPL PHYS, 88(2), 2000, pp. 817-821
Authors:
Li, T
Joshi, RP
Fazi, C
Citation: T. Li et al., Monte Carlo evaluations of degeneracy and interface roughness effects on electron transport in AlGaN-GaN heterostructures, J APPL PHYS, 88(2), 2000, pp. 829-837
Authors:
Joshi, RP
Neudeck, PG
Fazi, C
Citation: Rp. Joshi et al., Analysis of the temperature dependent thermal conductivity of silicon carbide for high temperature applications, J APPL PHYS, 88(1), 2000, pp. 265-269
Authors:
Joshi, RP
Yanni, O
Gallannaugh, SC
Citation: Rp. Joshi et al., A modified posterior approach to the elbow for total elbow replacement, J SHOUL ELB, 8(6), 1999, pp. 606-611
Authors:
Damayanthi, P
Joshi, RP
McAdoo, JA
Citation: P. Damayanthi et al., Electron mobility and drift velocity calculations for bulk GaSb material, J APPL PHYS, 86(9), 1999, pp. 5060-5064
Authors:
Joshi, RP
Kayasit, P
Islam, N
Schamiloglu, E
Fleddermann, CB
Schoenberg, J
Citation: Rp. Joshi et al., Simulation studies of persistent photoconductivity and filamentary conduction in opposed contact semi-insulating GaAs high power switches, J APPL PHYS, 86(7), 1999, pp. 3833-3843
Authors:
Islam, NE
Schamiloglu, E
Fleddermann, CB
Schoenberg, JSH
Joshi, RP
Citation: Ne. Islam et al., Analysis of high voltage operation of gallium arsenide photoconductive switches used in high power applications, J APPL PHYS, 86(3), 1999, pp. 1754-1758
Authors:
Zheng, L
Joshi, RP
Fazi, C
Citation: L. Zheng et al., Effects of barrier height fluctuations and electron tunneling on the reverse characteristics of 6H-SiC Schottky contacts, J APPL PHYS, 85(7), 1999, pp. 3701-3707
Authors:
Zheng, L
Joshi, RP
Fazi, C
Citation: L. Zheng et al., Dislocation defect based model analysis for the pre-breakdown reverse characteristics of 4H-SiC p(+)n diodes, J APPL PHYS, 85(11), 1999, pp. 7935-7938
Risultati:
1-17
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