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Results: 1-10 |
Results: 10
Enhanced output power in an InGaN-GaN multiquantum-well light-emitting diode with an InGaN current-spreading layer
Authors: Sheu, JK Chi, GC Jou, MJ
Citation: Jk. Sheu et al., Enhanced output power in an InGaN-GaN multiquantum-well light-emitting diode with an InGaN current-spreading layer, IEEE PHOTON, 13(11), 2001, pp. 1164-1166
Low-operation voltage of InGaN/GaN light-emitting diodes by using a Mg-doped Al0.15Ga0.85N/GaN superlattice
Authors: Sheu, JK Chi, GC Jou, MJ
Citation: Jk. Sheu et al., Low-operation voltage of InGaN/GaN light-emitting diodes by using a Mg-doped Al0.15Ga0.85N/GaN superlattice, IEEE ELEC D, 22(4), 2001, pp. 160-162
Characterization of the properties of Mg-doped Al0.15Ga0.85N/GaN superlattices
Authors: Sheu, JK Kuo, CH Chen, CC Chi, GC Jou, MJ
Citation: Jk. Sheu et al., Characterization of the properties of Mg-doped Al0.15Ga0.85N/GaN superlattices, SOL ST ELEC, 45(9), 2001, pp. 1665-1671
Crystal orientation dependence of optical gain in InGaN/GaN multiple-quantum-well structures
Authors: Chen, CC Hsieh, KL Sheu, JK Chi, GC Jou, MJ Lee, CH Lin, MZ
Citation: Cc. Chen et al., Crystal orientation dependence of optical gain in InGaN/GaN multiple-quantum-well structures, APPL PHYS L, 79(10), 2001, pp. 1477-1479
Investigation of the mechanism for Ti/Al ohmic contact on etched n-GaN surfaces
Authors: Sheu, JK Su, YK Chi, GC Jou, MJ Liu, CC Chang, CM Hung, WC Bow, JS Yu, YC
Citation: Jk. Sheu et al., Investigation of the mechanism for Ti/Al ohmic contact on etched n-GaN surfaces, J VAC SCI B, 18(2), 2000, pp. 729-732
The number of maximum independent sets in graphs
Authors: Jou, MJ Chang, GJ
Citation: Mj. Jou et Gj. Chang, The number of maximum independent sets in graphs, TAIWAN J M, 4(4), 2000, pp. 685-695
Luminescence of an InGaN/GaN multiple quantum well light-emitting diode
Authors: Sheu, JK Chi, GC Su, YK Liu, CC Chang, CM Hung, WC Jou, MJ
Citation: Jk. Sheu et al., Luminescence of an InGaN/GaN multiple quantum well light-emitting diode, SOL ST ELEC, 44(6), 2000, pp. 1055-1058
Indium tin oxide ohmic contact to highly doped n-GaN
Authors: Sheu, JK Su, YK Chi, GC Jou, MJ Liu, CC Chang, CM
Citation: Jk. Sheu et al., Indium tin oxide ohmic contact to highly doped n-GaN, SOL ST ELEC, 43(11), 1999, pp. 2081-2084
Inductively coupled plasma etching of GaN using Cl-2/Ar and Cl-2/N-2 gases
Authors: Sheu, JK Su, YK Chi, GC Jou, MJ Liu, CC Chang, CM Hung, WC
Citation: Jk. Sheu et al., Inductively coupled plasma etching of GaN using Cl-2/Ar and Cl-2/N-2 gases, J APPL PHYS, 85(3), 1999, pp. 1970-1974
High-transparency Ni/Au ohmic contact to p-type GaN
Authors: Sheu, JK Su, YK Chi, GC Koh, PL Jou, MJ Chang, CM Liu, CC Hung, WC
Citation: Jk. Sheu et al., High-transparency Ni/Au ohmic contact to p-type GaN, APPL PHYS L, 74(16), 1999, pp. 2340-2342
Risultati: 1-10 |