Authors:
Su, YK
Chiou, YZ
Juang, FS
Chang, SJ
Sheu, JK
Citation: Yk. Su et al., GaN and InGaN metal-semiconductor-metal photodetectors with different Schottky contact metals, JPN J A P 1, 40(4B), 2001, pp. 2996-2999
Citation: Fs. Juang et Tk. Chu, Effect of diluted ammonia flow rate on undoped GaN epitaxial films grown by MOCVD, J CRYST GR, 225(2-4), 2001, pp. 145-149
Citation: Sk. Saha et al., Temperature-dependent electroluminescence in poly [2-methoxy-5(2 '-ethylhexyloxy)-p-phenylenevinylene] light-emitting diode, J APPL PHYS, 89(7), 2001, pp. 4019-4022
Citation: Sk. Saha et al., Temperature- and field-dependent quantum efficiency in tris-(8-hydroxy) quinoline aluminum light-emitting diodes, J APPL PHYS, 89(12), 2001, pp. 8175-8178
Authors:
Ramaiah, KS
Raja, VS
Bhatnagar, AK
Tomlinson, RD
Pilkington, RD
Hill, AE
Chang, SJ
Su, YK
Juang, FS
Citation: Ks. Ramaiah et al., Optical, structural and electrical properties of tin doped indium oxide thin films prepared by spray-pyrolysis technique, SEMIC SCI T, 15(7), 2000, pp. 676-683
Citation: Ks. Ramaiah et al., Photoluminescence characteristics of Mg- and Si-doped GaN thin films grownby MOCVD technique, J CRYST GR, 220(4), 2000, pp. 405-412
Authors:
Su, YK
Chen, WR
Chang, SJ
Juang, FS
Lan, WH
Lin, ACH
Chang, H
Citation: Yk. Su et al., The red shift of ZnSSe metal-semiconductor-metal light emitting diodes with high injection currents, IEEE DEVICE, 47(7), 2000, pp. 1330-1333