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Results: 1-11 |
Results: 11
Femtosecond mid-infrared study of electron dynamics in InAs/InAlAs quantumdots (vol 7, pg 151, 2000)
Authors: Peronne, E Lampin, JF Alexandrou, A Gauthier-Lafaye, O Julien, FH Brault, J Gendry, M
Citation: E. Peronne et al., Femtosecond mid-infrared study of electron dynamics in InAs/InAlAs quantumdots (vol 7, pg 151, 2000), PHYSICA E, 11(1), 2001, pp. 51-51
Infrared spectroscopy of self-organized InAs nanostructures grown on InAlAs/InP(001) for infrared photodetection applications
Authors: Fossard, F Julien, FH Peronne, E Alexandrou, A Brault, J Gendry, M
Citation: F. Fossard et al., Infrared spectroscopy of self-organized InAs nanostructures grown on InAlAs/InP(001) for infrared photodetection applications, INFR PHYS T, 42(3-5), 2001, pp. 443-451
Optical and structural investigation of InAs/AlSb/GaSb heterostructures
Authors: Prevot, I Marcadet, X Durand, O Bisaro, R Julien, FH
Citation: I. Prevot et al., Optical and structural investigation of InAs/AlSb/GaSb heterostructures, OPT MATER, 17(1-2), 2001, pp. 193-195
Experimental and theoretical investigation of interband and intersubband transitions in type-II InAs/AlSb superlattices - art. no. 195318
Authors: Prevot, I Vinter, B Julien, FH Fossard, F Marcadet, X
Citation: I. Prevot et al., Experimental and theoretical investigation of interband and intersubband transitions in type-II InAs/AlSb superlattices - art. no. 195318, PHYS REV B, 6419(19), 2001, pp. 5318
Polarized front-illumination response in intraband quantum dot infrared photodetectors at 77 K - art. no. 045323
Authors: Finkman, E Maimon, S Immer, V Bahir, G Schacham, SE Fossard, F Julien, FH Brault, J Gendry, M
Citation: E. Finkman et al., Polarized front-illumination response in intraband quantum dot infrared photodetectors at 77 K - art. no. 045323, PHYS REV B, 6304(4), 2001, pp. 5323
Characterisation and optimisation of MBE grown arsenide/antimonide interfaces
Authors: Prevot, I Marcadet, X Durand, O Bisaro, R Bouchier, A Julien, FH
Citation: I. Prevot et al., Characterisation and optimisation of MBE grown arsenide/antimonide interfaces, J CRYST GR, 227, 2001, pp. 566-570
Room-temperature GaAs/AlGaAs multiple-quantum-well optical modulators for the 3-5 mu m atmospheric window
Authors: Alause, H Knap, W Robert, JL Planel, R Thierry-Mieg, V Julien, FH Zekentes, K Mosser, V
Citation: H. Alause et al., Room-temperature GaAs/AlGaAs multiple-quantum-well optical modulators for the 3-5 mu m atmospheric window, SEMIC SCI T, 15(7), 2000, pp. 724-727
Quantum fountain infrared light sources based on intersubband emissions inquantum wells
Authors: Julien, FH Boucaud, P Sauvage, S Gauthier-Lafaye, O Moussa, Z
Citation: Fh. Julien et al., Quantum fountain infrared light sources based on intersubband emissions inquantum wells, J PHYS IV, 9(P2), 1999, pp. 161-169
Strong normal-incidence infrared absorption in self-organized InAs/InAlAs quantum dots grown on InP(001)
Authors: Weber, A Gauthier-Lafaye, O Julien, FH Brault, J Gendry, M Desieres, Y Benyattou, T
Citation: A. Weber et al., Strong normal-incidence infrared absorption in self-organized InAs/InAlAs quantum dots grown on InP(001), APPL PHYS L, 74(3), 1999, pp. 413-415
High-power GaAs/AlGaAs quantum fountain unipolar laser emitting at 14.5 mum with 2.5% tunability
Authors: Gauthier-Lafaye, O Julien, FH Cabaret, S Lourtioz, JM Strasser, G Gornik, E Helm, M Bois, P
Citation: O. Gauthier-lafaye et al., High-power GaAs/AlGaAs quantum fountain unipolar laser emitting at 14.5 mum with 2.5% tunability, APPL PHYS L, 74(11), 1999, pp. 1537-1539
The effects of composition and doping on the response of GeC-Si photodiodes
Authors: Kolodzey, J Gauthier-Lafaye, O Sauvage, S Perrossier, JL Boucaud, P Julien, FH Lourtioz, JM Chen, F Orner, BA Roe, K Guedj, C Wilson, RG Spear, J
Citation: J. Kolodzey et al., The effects of composition and doping on the response of GeC-Si photodiodes, IEEE S T QU, 4(6), 1998, pp. 964-969
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