Authors: Juppo, M Alen, P Ritala, M Leskela, M

Citation: M. Juppo et al., Trimethylaluminum as a reducing agent in the atomic layer deposition of Ti(Al)N thin films, CHEM VAPOR, 7(5), 2001, pp. 211-217

Authors: Alen, P Juppo, M Ritala, M Sajavaara, T Keinonen, J Leskela, M

Citation: P. Alen et al., Atomic layer deposition of Ta(Al)N(C) thin films using trimethylaluminum as a reducing agent, J ELCHEM SO, 148(10), 2001, pp. G566-G571

Authors: Juppo, M Rahtu, A Ritala, M Leskela, M

Citation: M. Juppo et al., In situ mass spectrometry study on, surface reactions in atomic layer deposition of Al2O3 thin films from trimethylaluminum and water, LANGMUIR, 16(8), 2000, pp. 4034-4039

Authors: Juppo, M Ritala, M Leskela, M

Citation: M. Juppo et al., Use of 1,1-dimethylhydrazine in the atomic layer deposition of transition metal nitride thin films, J ELCHEM SO, 147(9), 2000, pp. 3377-3381

Authors: Ritala, M Juppo, M Kukli, K Rahtu, A Leskela, M

Citation: M. Ritala et al., In situ characterization of atomic layer deposition processes by a mass spectrometer, J PHYS IV, 9(P8), 1999, pp. 1021-1028

Authors: Martensson, P Juppo, M Ritala, M Leskela, M Carlsson, JO

Citation: P. Martensson et al., Use of atomic layer epitaxy for fabrication of Si/TiN/Cu structures, J VAC SCI B, 17(5), 1999, pp. 2122-2128