Authors: BASHIR R KABIR AE HEBERT F BRACKEN C

Citation: R. Bashir et al., TUNGSTEN SILICIDE AND TUNGSTEN POLYCIDE ANISOTROPIC DRY ETCH PROCESS FOR HIGHLY CONTROLLED DIMENSIONS AND PROFILES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(4), 1998, pp. 2118-2120

Authors: PAK JJ KABIR AE NEUDECK GW LOGSDON JH

Citation: Jj. Pak et al., A BRIDGE-TYPE PIEZORESISTIVE ACCELEROMETER USING MERGED EPITAXIAL LATERAL OVERGROWTH FOR THIN SILICON BEAM FORMATION, Sensors and actuators. A, Physical, 56(3), 1996, pp. 267-271

Authors: BASHIR R MCKEOWN W KABIR AE

Citation: R. Bashir et al., A SIMPLE PROCESS TO PRODUCE A HIGH-QUALITY SILICON SURFACE PRIOR TO SELECTIVE EPITAXIAL-GROWTH, IEEE electron device letters, 16(7), 1995, pp. 306-308

Authors: SAMAVEDAM SB KVAM EP KABIR AE NEUDECK GW

Citation: Sb. Samavedam et al., DEFECT STRUCTURES IN SILICON MERGED EPITAXIAL LATERAL OVERGROWTH, Journal of electronic materials, 24(11), 1995, pp. 1747-1751