Citation: B. Kaczer et al., INVESTIGATION OF ULTRATHIN SIO2 FILM THICKNESS VARIATIONS BY BALLISTIC-ELECTRON-EMISSION MICROSCOPY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(4), 1998, pp. 2302-2307
Authors:
IM HJ
KACZER B
PELZ JP
LIMPIJUMNONG S
LAMBRECHT WRL
CHOYKE WJ
Citation: Hj. Im et al., NANOMETER-SCALE INVESTIGATION OF METAL-SIC INTERFACES USING BALLISTIC-ELECTRON-EMISSION MICROSCOPY, Journal of electronic materials, 27(4), 1998, pp. 345-352
Citation: B. Kaczer et al., DIRECT OBSERVATION OF CONDUCTION-BAND STRUCTURE OF 4H-SIC AND 6H-SIC USING BALLISTIC-ELECTRON-EMISSION MICROSCOPY, Physical review. B, Condensed matter, 57(7), 1998, pp. 4027-4032
Citation: B. Kaczer et al., MICROSCOPIC CHARACTERIZATION OF HOT-ELECTRON SPREADING AND TRAPPING IN SIO2-FILMS USING BALLISTIC-ELECTRON-EMISSION MICROSCOPY, Applied physics letters, 73(13), 1998, pp. 1871-1873
Citation: Hj. Im et al., BALLISTIC-ELECTRON-EMISSION MICROSCOPY STUDY OF SCHOTTKY CONTACTS ON 6H-SIC AND 4H-SIC, Applied physics letters, 72(7), 1998, pp. 839-841
Citation: B. Kaczer et Jp. Pelz, BALLISTIC-ELECTRON-EMISSION MICROSCOPY STUDIES OF CHARGE TRAPPING IN SIO2, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(4), 1996, pp. 2864-2871
Citation: B. Kaczer et al., NANOMETER-SCALE CREATION AND CHARACTERIZATION OF TRAPPED CHARGE IN SIO2-FILMS USING BALLISTIC-ELECTRON-EMISSION MICROSCOPY, Physical review letters, 77(1), 1996, pp. 91-94