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Results: 1-6 |
Results: 6

Authors: XIA J SAITO T AOKI T KAMAKURA Y TANIGUCHI K
Citation: J. Xia et al., BORON ACCUMULATION IN THE (311)-DEFECT-REGION INDUCED BY SELF-IMPLANTATION INTO SILICON SUBSTRATE, JPN J A P 2, 37(8A), 1998, pp. 913-915

Authors: TOMITA T KAMAKURA Y TANIGUCHI K
Citation: T. Tomita et al., ENERGY RELAXATION LENGTH FOR BALLISTIC ELECTRON-TRANSPORT IN SIO2, Physica status solidi. b, Basic research, 204(1), 1997, pp. 129-132

Authors: TOMITA T UTSUNOMIYA H KAMAKURA Y TANIGUCHI K
Citation: T. Tomita et al., HOT HOLE INDUCED BREAKDOWN OF THIN SILICON DIOXIDE FILMS, Applied physics letters, 71(25), 1997, pp. 3664-3666

Authors: KAMAKURA Y MIZUNO H YAMAJI M MORIFUJI M TANIGUCHI K HAMAGUCHI C KUNIKIYO T TAKENAKA M
Citation: Y. Kamakura et al., IMPACT IONIZATION MODEL FOR FULL BAND MONTE-CARLO SIMULATION, Journal of applied physics, 75(7), 1994, pp. 3500-3506

Authors: KUNIKIYO T TAKENAKA M KAMAKURA Y YAMAJI M MIZUNO H MORIFUJI M TANIGUCHI K HAMAGUCHI C
Citation: T. Kunikiyo et al., A MONTE-CARLO SIMULATION OF ANISOTROPIC ELECTRON-TRANSPORT IN SILICONINCLUDING FULL BAND-STRUCTURE AND ANISOTROPIC IMPACT-IONIZATION MODEL, Journal of applied physics, 75(1), 1994, pp. 297-312

Authors: ABRAMO A BAUDRY L BRUNETTI R CASTAGNE R CHAREF M DESSENNE F DOLLFUS P DUTTON R ENGL WL FAUQUEMBERGUE R FIEGNA C FISCHETTI MV GALDIN S GOLDSMAN N HACKEL M HAMAGUCHI C HESS K HENNACY K HESTO P HIGMAN JM IIZUKA T JUNGEMANN C KAMAKURA Y KOSINA H KUNIKIYO T LAUX SE LIM HC MAZIAR C MIZUNO H PEIFER HJ RAMASWAMY S SANO N SCORBOHACI PG SELBERHERR S TAKENAKA M TANG TW TANIGUCHI K THOBEL JL THOMA R TOMIZAWA K TOMIPZAWA M VOGELSANG T WANG SL WANG XL YAO CS YODER PD YOSHII A
Citation: A. Abramo et al., A COMPARISON OF NUMERICAL-SOLUTIONS OF THE BOLTZMANN TRANSPORT-EQUATION FOR HIGH-ENERGY ELECTRON-TRANSPORT SILICON, I.E.E.E. transactions on electron devices, 41(9), 1994, pp. 1646-1654
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