Authors:
XIA J
SAITO T
AOKI T
KAMAKURA Y
TANIGUCHI K
Citation: J. Xia et al., BORON ACCUMULATION IN THE (311)-DEFECT-REGION INDUCED BY SELF-IMPLANTATION INTO SILICON SUBSTRATE, JPN J A P 2, 37(8A), 1998, pp. 913-915
Citation: T. Tomita et al., ENERGY RELAXATION LENGTH FOR BALLISTIC ELECTRON-TRANSPORT IN SIO2, Physica status solidi. b, Basic research, 204(1), 1997, pp. 129-132
Authors:
KUNIKIYO T
TAKENAKA M
KAMAKURA Y
YAMAJI M
MIZUNO H
MORIFUJI M
TANIGUCHI K
HAMAGUCHI C
Citation: T. Kunikiyo et al., A MONTE-CARLO SIMULATION OF ANISOTROPIC ELECTRON-TRANSPORT IN SILICONINCLUDING FULL BAND-STRUCTURE AND ANISOTROPIC IMPACT-IONIZATION MODEL, Journal of applied physics, 75(1), 1994, pp. 297-312
Authors:
ABRAMO A
BAUDRY L
BRUNETTI R
CASTAGNE R
CHAREF M
DESSENNE F
DOLLFUS P
DUTTON R
ENGL WL
FAUQUEMBERGUE R
FIEGNA C
FISCHETTI MV
GALDIN S
GOLDSMAN N
HACKEL M
HAMAGUCHI C
HESS K
HENNACY K
HESTO P
HIGMAN JM
IIZUKA T
JUNGEMANN C
KAMAKURA Y
KOSINA H
KUNIKIYO T
LAUX SE
LIM HC
MAZIAR C
MIZUNO H
PEIFER HJ
RAMASWAMY S
SANO N
SCORBOHACI PG
SELBERHERR S
TAKENAKA M
TANG TW
TANIGUCHI K
THOBEL JL
THOMA R
TOMIZAWA K
TOMIPZAWA M
VOGELSANG T
WANG SL
WANG XL
YAO CS
YODER PD
YOSHII A
Citation: A. Abramo et al., A COMPARISON OF NUMERICAL-SOLUTIONS OF THE BOLTZMANN TRANSPORT-EQUATION FOR HIGH-ENERGY ELECTRON-TRANSPORT SILICON, I.E.E.E. transactions on electron devices, 41(9), 1994, pp. 1646-1654