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Results: 1-25 | 26-35 |
Results: 26-35/35
PHOTO-ESR AND ABSORPTION STUDIES OF ANTISITE DEFECTS IN GAP
Authors: PALCZEWSKA M JASINSKI J KAMINSKA M
Citation: M. Palczewska et al., PHOTO-ESR AND ABSORPTION STUDIES OF ANTISITE DEFECTS IN GAP, Acta Physica Polonica. A, 87(2), 1995, pp. 461-464
ELECTRICAL AND OPTICAL-PROPERTIES OF HIGHLY NONSTOICHIOMETRIC GAAS
Authors: KURPIEWSKI A KORONA K KAMINSKA M PALCZEWSKA M JAGADISH C WILLIAMS J
Citation: A. Kurpiewski et al., ELECTRICAL AND OPTICAL-PROPERTIES OF HIGHLY NONSTOICHIOMETRIC GAAS, Acta Physica Polonica. A, 87(2), 1995, pp. 518-522
FEMTOSECOND ELECTRON RELAXATION IN NONSTOICHIOMETRIC GAAS AND INGAAS
Authors: KROTKUS A MARCINKEVICIUS S JAGADISH C KAMINSKA M
Citation: A. Krotkus et al., FEMTOSECOND ELECTRON RELAXATION IN NONSTOICHIOMETRIC GAAS AND INGAAS, Journal of luminescence, 66-7(1-6), 1995, pp. 455-461
ANTISITE DEFECTS CREATED IN NEUTRON-IRRADIATED GAP CRYSTALS
Authors: PALCZEWSKA M JASINSKI J KORONA K KAMINSKA M BOURRET ED ELLIOT AG
Citation: M. Palczewska et al., ANTISITE DEFECTS CREATED IN NEUTRON-IRRADIATED GAP CRYSTALS, Journal of applied physics, 78(6), 1995, pp. 3680-3685
HIGH-RESISTIVITY AND PICOSECOND CARRIER LIFETIME OF GAAS IMPLANTED WITH MEV GA IONS AT HIGH FLUENCES
Authors: JAGADISH C TAN HH JASINSKI J KAMINSKA M PALCZEWSKA M KROTKUS A MARCINKEVICIUS S
Citation: C. Jagadish et al., HIGH-RESISTIVITY AND PICOSECOND CARRIER LIFETIME OF GAAS IMPLANTED WITH MEV GA IONS AT HIGH FLUENCES, Applied physics letters, 67(12), 1995, pp. 1724-1726
PICOSECOND CARRIER LIFETIME IN GAAS IMPLANTED WITH HIGH-DOSES OF AS IONS - AN ALTERNATIVE MATERIAL TO LOW-TEMPERATURE GAAS FOR OPTOELECTRONIC APPLICATIONS
Authors: KROTKUS A MARCINKEVICIUS S JASINSKI J KAMINSKA M TAN HH JAGADISH C
Citation: A. Krotkus et al., PICOSECOND CARRIER LIFETIME IN GAAS IMPLANTED WITH HIGH-DOSES OF AS IONS - AN ALTERNATIVE MATERIAL TO LOW-TEMPERATURE GAAS FOR OPTOELECTRONIC APPLICATIONS, Applied physics letters, 66(24), 1995, pp. 3304-3306
EL2-LIKE DEFECTS IN LOW-TEMPERATURE GAAS
Authors: KOWALSKI G KURPIEWSKI A KAMINSKA M WEBER ER
Citation: G. Kowalski et al., EL2-LIKE DEFECTS IN LOW-TEMPERATURE GAAS, Materials science & engineering. B, Solid-state materials for advanced technology, 22(1), 1993, pp. 27-30
ELECTROOPTICAL MEASUREMENT OF LOW-TEMPERATURE GAAS
Authors: KORONA KP KAMINSKA M BARANOWSKI JM WEBER ER
Citation: Kp. Korona et al., ELECTROOPTICAL MEASUREMENT OF LOW-TEMPERATURE GAAS, Materials science & engineering. B, Solid-state materials for advanced technology, 22(1), 1993, pp. 41-44
ANTISITES DEFECTS IN GAP
Authors: JASINSKI J KAMINSKA M PALCZEWSKA M JURKIEWICZWAGNER E
Citation: J. Jasinski et al., ANTISITES DEFECTS IN GAP, Acta Physica Polonica. A, 84(3), 1993, pp. 579-582
X-RAY DIFFRACTOMETER AS A TOOL FOR EXAMINING LATTICE-RELAXATION PHENOMENA
Authors: LESZCZYNSKI M KOWALSKI G KAMINSKA M SUSKI T WEBER ER
Citation: M. Leszczynski et al., X-RAY DIFFRACTOMETER AS A TOOL FOR EXAMINING LATTICE-RELAXATION PHENOMENA, Semiconductor science and technology, 6(10B), 1991, pp. 66-69
Risultati: 1-25 | 26-35 |