Citation: Rt. Hsu et al., STUDY OF 2-DIMENSIONAL HOLE GAS CONCENTRATION AND HOLE MOBILITY IN ZINC DELTA-DOPED GAAS AND PSEUDOMORPHIC GAAS IN0.2GA0.8AS HETEROSTRUCTURES/, Superlattices and microstructures, 24(2), 1998, pp. 175-180
Authors:
LO I
KAO MJ
HSU WC
KUO KK
CHANG YC
WENG HM
CHIANG JC
TSAY SF
Citation: I. Lo et al., PHOTOINDUCED ELECTRON COUPLING IN DELTA-DOPED GAAS IN0.18GA0.82AS QUANTUM-WELLS/, Physical review. B, Condensed matter, 54(7), 1996, pp. 4774-4779
Authors:
KAO MJ
SHIEH HM
HSU WC
LIN TY
WU YH
HSU RT
Citation: Mj. Kao et al., INVESTIGATION OF THE ELECTRON-TRANSFER CHARACTERISTICS IN MULTI-DELTA-DOPED GAAS-FETS, I.E.E.E. transactions on electron devices, 43(8), 1996, pp. 1181-1186
Authors:
WU YH
SU JS
HSU WC
LIN W
LIU WC
KAO MJ
HSU RT
Citation: Yh. Wu et al., EMITTER EDGE-THINNING EFFECT ON INGAAS INP DOUBLE-HETEROSTRUCTURE-EMITTER BIPOLAR-TRANSISTOR/, JPN J A P 1, 34(11), 1995, pp. 5908-5911
Citation: Mj. Kao et al., HIGH CARRIER DENSITY AND MOBILITY IN GAAS INGAAS/GAAS DOUBLE DELTA-DOPED CHANNELS HETEROSTRUCTURES/, JPN J A P 2, 34(1A), 1995, pp. 1-3
Citation: Mj. Kao et al., IMPROVED MOBILITIES AND CONCENTRATIONS IN DOUBLE-QUANTUM-WELL INGAAS GAAS PSEUDOMORPHIC HFETS USING MULTICOUPLED DELTA-DOPED GAAS/, Solid-state electronics, 38(6), 1995, pp. 1171-1173
Citation: Cl. Wu et al., DEPLETION-MIS-LIKE INGAAS GAAS DELTA-DOPED STRUCTURES WITH HIGH BREAKDOWN VOLTAGE AND LARGE GATE VOLTAGE SWING/, Solid-state electronics, 38(2), 1995, pp. 433-436
Authors:
KAO MJ
HSU WC
HSU RT
WU YH
LIN TY
CHANG CY
Citation: Mj. Kao et al., CHARACTERISTICS OF GRADED-LIKE MULTIPLE-DELTA-DOPED GAAS FIELD-EFFECTTRANSISTORS, Applied physics letters, 66(19), 1995, pp. 2505-2506
Citation: Hm. Shieh et al., ENHANCED 2-DIMENSIONAL ELECTRON-GAS CONCENTRATIONS AND MOBILITIES IN MULTIPLE DELTA-DOPED GAAS IN0.25GA0.75AS/GAAS PSEUDOMORPHIC HETEROSTRUCTURES/, JPN J A P 1, 33(4A), 1994, pp. 1778-1780
Citation: Hm. Shieh et al., INFLUENCES OF DELTA-DOPING TIME AND SPACER THICKNESS ON THE MOBILITY AND 2-DIMENSIONAL ELECTRON-GAS CONCENTRATION IN DELTA-DOPED GAAS INGAAS/GAAS PSEUDOMORPHIC HETEROSTRUCTURES/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(1), 1994, pp. 154-157
Citation: Mj. Kao et al., IMPROVED SELECTIVELY DELTA-DOPED GAAS INGAAS DOUBLE-QUANTUM-WELL PSEUDOMORPHIC HFETS UTILIZING A BURIED P-LAYER ON THE BUFFER/, JPN J A P 2, 32(10B), 1993, pp. 120001503-120001505
Citation: Wc. Hsu et al., ON THE IMPROVEMENT OF GATE VOLTAGE SWINGS IN DELTA-DOPED GAAS INXGA1-XAS/GAAS PSEUDOMORPHIC HETEROSTRUCTURES/, I.E.E.E. transactions on electron devices, 40(9), 1993, pp. 1630-1635
Citation: Kh. Lin et al., ANAEROBIC THRESHOLD AND MAXIMAL OXYGEN-CONSUMPTION DURING ARM CRANKING EXERCISE IN PARAPLEGIA, Archives of physical medicine and rehabilitation, 74(5), 1993, pp. 515-520