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Authors: ZAINABIDINOV SZ BARANSKIY PI KARIMOV IN TURAEV AR KARIMBERDIEV KK

Citation: Sz. Zainabidinov et al., EFFECT OF HIGH HYDROSTATIC-PRESSURE ON THE ELECTROPHYSICAL PROPERTIESOF DOPED SILICON-CRYSTALS AND DEVICES BASED ON THEM, Solid-state electronics, 38(3), 1995, pp. 693-695

Authors: ALVARES KK BERMAN LS KARIMOV IN

Citation: Kk. Alvares et al., CAPACITANCE RELAXATION IN SILICON-(CALCIUM FLUORIDE)-GOLD METAL-INSULATOR-SEMICONDUCTOR TUNNEL-TRANSPARENT STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY, Semiconductors, 28(8), 1994, pp. 835-838

Authors: ALVARES KK BERMAN LS BOREVICH VA GREKHOV IV KARIMOV IN SOKOLOV NS SHULEKIN AF

Citation: Kk. Alvares et al., VOLTAGE-CAPACITANCE CHARACTERISTICS OF SILICON-(CALCIUM FLUORIDE)-GOLD MIS TUNNEL STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY, Semiconductors, 28(2), 1994, pp. 211-212

Authors: BERMAN LS GREKHOV IV KARIMOV IN OSTROUMOVA EV

Citation: Ls. Berman et al., SURFACE-STATES ON SILICON IN METAL-INSULATOR-SEMICONDUCTOR STRUCTURESWITH A TUNNEL-THIN OXIDE LAYER, Semiconductors, 27(6), 1993, pp. 497-500