Authors:
HACHENBERG T
KARMANN S
PFEIFFER B
THOMAS H
GRUNDLING M
WENDT M
Citation: T. Hachenberg et al., THE EFFECT OF DOPEXAMINE ON VENTILATION-PERFUSION DISTRIBUTION AND PULMONARY GAS-EXCHANGE IN ANESTHETIZED, PARALYZED PATIENTS, Anesthesia and analgesia, 86(2), 1998, pp. 314-319
Authors:
JORDAN C
SCHILLINGER H
DRESSLER L
KARMANN S
RICHTER W
GOETZ K
MAROWSKY G
SAUERBREY R
Citation: C. Jordan et al., CHARACTERIZATION OF SILICON-CARBIDE SURFACES OF 6H-POLYTYPE, 15R-POLYTYPE AND 3C-POLYTYPE BY OPTICAL 2ND-HARMONIC GENERATION IN COMPARISON WITH X-RAY-DIFFRACTION TECHNIQUES, Applied physics A: Materials science & processing, 65(3), 1997, pp. 251-257
Authors:
KARMANN S
SCHENK HPD
KAISER U
FISSEL A
RICHTER W
Citation: S. Karmann et al., GROWTH OF COLUMNAR ALUMINUM NITRIDE LAYERS ON SI(111) BY MOLECULAR-BEAM EPITAXY, Materials science & engineering. B, Solid-state materials for advanced technology, 50(1-3), 1997, pp. 228-232
Authors:
KAISER U
BROWN PD
JINSCHEK J
ADAMIK M
HUMPHREYS CJ
KARMANN S
FISSEL A
PFENNIGHAUS K
RICHTER W
Citation: U. Kaiser et al., MICROSTRUCTURAL INVESTIGATIONS OF SILICON-CARBIDE AND ALUMINUM NITRIDE MBE LAYERS ON SILICON SUBSTRATES, European journal of cell biology, 74, 1997, pp. 120-120
Citation: D. Holst et al., CARDIOVASCULAR STABILITY DURING SPINAL-AN ESTHESIA - CATHETER TECHNIQUE IN COMPARISON WITH THE SINGLE-DOSE METHOD, Anasthesist, 46(1), 1997, pp. 38-42
Authors:
ALEXANDER DGA
UNGER EC
SEEGER SJ
KARMANN S
KRUPINSKI EA
Citation: Dga. Alexander et al., ESTIMATION OF VOLUMES OF DISTRIBUTION AND INTRATUMORAL ETHANOL CONCENTRATIONS BY COMPUTED-TOMOGRAPHY SCANNING AFTER PERCUTANEOUS ETHANOL INJECTION, Academic radiology, 3(1), 1996, pp. 49-56
Authors:
KARMANN S
DICIOCCIO L
BLANCHARD B
OUISSE T
MUYARD D
JAUSSAUD C
Citation: S. Karmann et al., UNINTENTIONAL INCORPORATION OF CONTAMINANTS DURING CHEMICAL-VAPOR-DEPOSITION OF SILICON-CARBIDE, Materials science & engineering. B, Solid-state materials for advanced technology, 29(1-3), 1995, pp. 134-137
Citation: E. Bano et al., SURFACE-POTENTIAL FLUCTUATIONS IN METAL-OXIDE-SEMICONDUCTOR CAPACITORS FABRICATED ON DIFFERENT SILICON-CARBIDE POLYTYPES, Applied physics letters, 65(21), 1994, pp. 2723-2724
Authors:
KARMANN S
HABERSTROH C
ENGELBRECHT F
SUTTROP W
SCHONER A
SCHADT M
HELBIG R
PENSL G
STEIN RA
LEIBENZEDER S
Citation: S. Karmann et al., CVD GROWTH AND CHARACTERIZATION OF SINGLE-CRYSTALLINE 6H-SILICON CARBIDE, Physica. B, Condensed matter, 185(1-4), 1993, pp. 75-78