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Results: 1-9 |
Results: 9

Authors: HACHENBERG T KARMANN S PFEIFFER B THOMAS H GRUNDLING M WENDT M
Citation: T. Hachenberg et al., THE EFFECT OF DOPEXAMINE ON VENTILATION-PERFUSION DISTRIBUTION AND PULMONARY GAS-EXCHANGE IN ANESTHETIZED, PARALYZED PATIENTS, Anesthesia and analgesia, 86(2), 1998, pp. 314-319

Authors: JORDAN C SCHILLINGER H DRESSLER L KARMANN S RICHTER W GOETZ K MAROWSKY G SAUERBREY R
Citation: C. Jordan et al., CHARACTERIZATION OF SILICON-CARBIDE SURFACES OF 6H-POLYTYPE, 15R-POLYTYPE AND 3C-POLYTYPE BY OPTICAL 2ND-HARMONIC GENERATION IN COMPARISON WITH X-RAY-DIFFRACTION TECHNIQUES, Applied physics A: Materials science & processing, 65(3), 1997, pp. 251-257

Authors: KARMANN S SCHENK HPD KAISER U FISSEL A RICHTER W
Citation: S. Karmann et al., GROWTH OF COLUMNAR ALUMINUM NITRIDE LAYERS ON SI(111) BY MOLECULAR-BEAM EPITAXY, Materials science & engineering. B, Solid-state materials for advanced technology, 50(1-3), 1997, pp. 228-232

Authors: KAISER U BROWN PD JINSCHEK J ADAMIK M HUMPHREYS CJ KARMANN S FISSEL A PFENNIGHAUS K RICHTER W
Citation: U. Kaiser et al., MICROSTRUCTURAL INVESTIGATIONS OF SILICON-CARBIDE AND ALUMINUM NITRIDE MBE LAYERS ON SILICON SUBSTRATES, European journal of cell biology, 74, 1997, pp. 120-120

Authors: HOLST D MOLLMANN M KARMANN S WENDT M
Citation: D. Holst et al., CARDIOVASCULAR STABILITY DURING SPINAL-AN ESTHESIA - CATHETER TECHNIQUE IN COMPARISON WITH THE SINGLE-DOSE METHOD, Anasthesist, 46(1), 1997, pp. 38-42

Authors: ALEXANDER DGA UNGER EC SEEGER SJ KARMANN S KRUPINSKI EA
Citation: Dga. Alexander et al., ESTIMATION OF VOLUMES OF DISTRIBUTION AND INTRATUMORAL ETHANOL CONCENTRATIONS BY COMPUTED-TOMOGRAPHY SCANNING AFTER PERCUTANEOUS ETHANOL INJECTION, Academic radiology, 3(1), 1996, pp. 49-56

Authors: KARMANN S DICIOCCIO L BLANCHARD B OUISSE T MUYARD D JAUSSAUD C
Citation: S. Karmann et al., UNINTENTIONAL INCORPORATION OF CONTAMINANTS DURING CHEMICAL-VAPOR-DEPOSITION OF SILICON-CARBIDE, Materials science & engineering. B, Solid-state materials for advanced technology, 29(1-3), 1995, pp. 134-137

Authors: BANO E OUISSE T DICIOCCIO L KARMANN S
Citation: E. Bano et al., SURFACE-POTENTIAL FLUCTUATIONS IN METAL-OXIDE-SEMICONDUCTOR CAPACITORS FABRICATED ON DIFFERENT SILICON-CARBIDE POLYTYPES, Applied physics letters, 65(21), 1994, pp. 2723-2724

Authors: KARMANN S HABERSTROH C ENGELBRECHT F SUTTROP W SCHONER A SCHADT M HELBIG R PENSL G STEIN RA LEIBENZEDER S
Citation: S. Karmann et al., CVD GROWTH AND CHARACTERIZATION OF SINGLE-CRYSTALLINE 6H-SILICON CARBIDE, Physica. B, Condensed matter, 185(1-4), 1993, pp. 75-78
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