Authors: KROTKUS A PACEBUTAS V KAVALIAUSKAS J SUBACIUS I GRIGORAS K

Citation: A. Krotkus et al., LIGHT TRAPPING EFFECT IN SILICON-WAFERS WITH ANODICALLY ETCHED SURFACES, Applied physics A: Materials science & processing, 64(4), 1997, pp. 357-360

Authors: GRIGORAS K KROTKUS A PACEBUTAS V KAVALIAUSKAS J SIMKIENE I

Citation: K. Grigoras et al., ENHANCED LIGHT-ABSORPTION IN ANODICALLY ETCHED SILICON-WAFERS, Thin solid films, 276(1-2), 1996, pp. 228-230

Authors: KAVALIAUSKAS J KRIVAITE G GALICKAS A SIMKIENE I OLIN U OTTOSSON M

Citation: J. Kavaliauskas et al., QUANTUM-CONFINED STARK-EFFECT IN INGAAS GAAS QUANTUM-WELLS UNDER HIGHELECTRIC-FIELDS/, Physica status solidi. b, Basic research, 191(1), 1995, pp. 155-159

Authors: BENDORIUS RA KAVALIAUSKAS J

Citation: Ra. Bendorius et J. Kavaliauskas, WAVELENGTH-MODULATED REFLECTIVITY STUDY OF ENERGY-GAP GRADING IN ALXGA1-XAS LAYERS, Physica status solidi. a, Applied research, 143(2), 1994, pp. 110000115-110000118

Authors: KAVALIAUSKAS J KRIVAITE G LIDEIKIS T SIMKIENE I TREIDERIS G OLIN U OTTOSSON M

Citation: J. Kavaliauskas et al., ELECTROREFLECTANCE STUDIES OF INGAAS GAAS ASYMMETRIC STEP QUANTUM-WELLS/, Semiconductor science and technology, 8(10), 1993, pp. 1875-1880