Authors:
KAWACHI G
GRAEFF CFO
BRANDT MS
STUTZMANN M
Citation: G. Kawachi et al., SATURATION MEASUREMENTS OF ELECTRICALLY DETECTED MAGNETIC-RESONANCE IN HYDROGENATED AMORPHOUS-SILICON BASED THIN-FILM TRANSISTORS, JPN J A P 1, 36(1A), 1997, pp. 121-125
Authors:
KAWACHI G
GRAEFF CFO
BRANDT MS
STUTZMANN M
Citation: G. Kawachi et al., CARRIER TRANSPORT IN AMORPHOUS SILICON-BASED THIN-FILM TRANSISTORS STUDIED BY SPIN-DEPENDENT TRANSPORT, Physical review. B, Condensed matter, 54(11), 1996, pp. 7957-7964
Authors:
GRAEFF CFO
KAWACHI G
BRANDT MS
STUTZMANN M
POWELL MJ
Citation: Cfo. Graeff et al., SPIN-DEPENDENT TRANSPORT IN AMORPHOUS-SILICON THIN-FILM TRANSISTORS, Journal of non-crystalline solids, 200, 1996, pp. 1117-1120
Citation: G. Kawachi et al., LOCALIZED DENSITY-OF-STATES IN HYDROGENATED AMORPHOUS SILICON SILICONNITRIDE INTERFACES STUDIED BY TRANSIENT VOLTAGE SPECTROSCOPY/, Journal of applied physics, 80(10), 1996, pp. 5786-5790
Citation: G. Kawachi et al., APPLICATION OF ION DOPING AND EXCIMER-LASER ANNEALING TO FABRICATION OF LOW-TEMPERATURE POLYCRYSTALLINE SI THIN-FILM TRANSISTORS, JPN J A P 1, 33(4A), 1994, pp. 2092-2099
Authors:
KAWACHI G
KIMURA E
WAKUI Y
KONISHI N
YAMAMOTO H
MATSUKAWA Y
SASANO A
Citation: G. Kawachi et al., A NOVEL TECHNOLOGY FOR A-SI TFT-LCDS WITH BURIED ITO ELECTRODE STRUCTURE, I.E.E.E. transactions on electron devices, 41(7), 1994, pp. 1120-1124