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Results:
1-13
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Results: 13
Authors:
KAWASUSO A
ITOH H
MORISHITA N
YOSHIKAWA M
OHSHIMA T
NASHIYAMA I
OKADA S
OKUMURA H
YOSHIDA S
Citation: A. Kawasuso et al., SILICON VACANCIES IN 3C-SIC OBSERVED BY POSITRON LIFETIME AND ELECTRON-SPIN-RESONANCE, Applied physics A: Materials science & processing, 67(2), 1998, pp. 209-212
Authors:
KAWASUSO A
OKADA S
Citation: A. Kawasuso et S. Okada, REFLECTION HIGH-ENERGY POSITRON DIFFRACTION FROM A SI(111) SURFACE, Physical review letters, 81(13), 1998, pp. 2695-2698
Authors:
KAWASUSO A
OKADA S
Citation: A. Kawasuso et S. Okada, ANOMALOUS TEMPERATURE-DEPENDENCE OF POSITRON TRAPPING DUE TO DIVACANCIES IN SI, JPN J A P 1, 36(2), 1997, pp. 605-611
Authors:
TANG Z
HASEGAWA M
CHIBA T
SAITO M
KAWASUSO A
LI ZQ
FU RT
AKAHANE T
KAWAZOE Y
YAMAGUCHI S
Citation: Z. Tang et al., ANISOTROPY IN THE POSITRON 2D ANGULAR-CORRELATION OF ANNIHILATION RADIATION FOR SINGLY NEGATIVE DIVACANCIES IN SI, Physical review letters, 78(11), 1997, pp. 2236-2239
Authors:
ITOH H
KAWASUSO A
OHSHIMA T
YOSHIKAWA M
NASHIYAMA I
TANIGAWA S
MISAWA S
OKUMURA H
YOSHIDA S
Citation: H. Itoh et al., INTRINSIC DEFECTS IN CUBIC SILICON-CARBIDE, Physica status solidi. a, Applied research, 162(1), 1997, pp. 173-198
Authors:
KAWASUSO A
ITOH H
OHSHIMA T
ABE K
OKADA S
Citation: A. Kawasuso et al., VACANCY PRODUCTION BY 3 MEV ELECTRON-IRRADIATION IN 6H-SIC STUDIED BYPOSITRON LIFETIME SPECTROSCOPY, Journal of applied physics, 82(7), 1997, pp. 3232-3238
Authors:
KAWASUSO A
OKADA S
SUEZAWA M
HONDA T
YONENAGA I
Citation: A. Kawasuso et al., POSITRON-ANNIHILATION IN ELECTRON-IRRADIATED SIXGE1-X BULK CRYSTALS, Journal of applied physics, 81(6), 1997, pp. 2916-2918
Authors:
KAWASUSO A
ITOH H
OKADA S
OKUMURA H
Citation: A. Kawasuso et al., ANNEALING PROCESSES OF VACANCY-TYPE DEFECTS IN ELECTRON-IRRADIATED AND AS-GROWN 6H-SIC STUDIED BY POSITRON LIFETIME SPECTROSCOPY, Journal of applied physics, 80(10), 1996, pp. 5639-5645
Authors:
KAWASUSO A
SUEZAWA M
HASEGAWA M
YAMAGUCHI S
SUMINO K
Citation: A. Kawasuso et al., POSITRON ANNIHILATIONS ASSOCIATED WITH DEFECTS IN PLASTICALLY DEFORMED SI, JPN J A P 1, 34(9A), 1995, pp. 4579-4586
Authors:
KAWASUSO A
HASEGAWA M
SUEZAWA M
YAMAGUCHI S
SUMINO K
Citation: A. Kawasuso et al., CHARGE-STATE DEPENDENCES OF POSITRON TRAPPING RATES ASSOCIATED WITH DIVACANCIES AND VACANCY-PHOSPHORUS PAIRS IN SI, JPN J A P 1, 34(5A), 1995, pp. 2197-2206
Authors:
HASEGAWA M
KAWASUSO A
CHIBA T
AKAHANE T
SUEZAWA M
YAMAGUCHI S
SUMINO K
Citation: M. Hasegawa et al., POSITRON LIFETIME AND 2D-ACAR STUDIES OF DIVACANCIES IN SI, Applied physics A: Materials science & processing, 61(1), 1995, pp. 65-70
Authors:
KAWASUSO A
HASEGAWA M
SUEZAWA M
YAMAGUCHI S
SUMINO K
Citation: A. Kawasuso et al., AN ANNEALING STUDY OF DEFECTS INDUCED BY ELECTRON-IRRADIATION OF CZOCHRALSKI-GROWN SI USING A POSITRON LIFETIME TECHNIQUE, Applied surface science, 85(1-4), 1995, pp. 280-286
Authors:
KAWASUSO A
HASEGAWA M
SUEZAWA M
YAMAGUCHI S
SUMINO K
Citation: A. Kawasuso et al., STUDIES OF DIVACANCY IN SI USING POSITRON LIFETIME MEASUREMENT, Hyperfine interactions, 84(1-4), 1994, pp. 397-406
Risultati:
1-13
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