Authors: KAWAURA H SAKAMOTO T BABA T OCHIAI Y FUJITA J MATSUI S SONE J

Citation: H. Kawaura et al., TRANSISTOR OPERATION OF 30-NM GATE-LENGTH EJ-MOSFETS, IEEE electron device letters, 19(3), 1998, pp. 74-76

Authors: SAKAMOTO T KAWAURA H BABA T

Citation: T. Sakamoto et al., SINGLE-ELECTRON TRANSISTORS FABRICATED FROM A DOPED-SI FILM IN A SILICON-ON-INSULATOR SUBSTRATE, Applied physics letters, 72(7), 1998, pp. 795-796

Authors: SAKAMOTO T KAWAURA H BABA T

Citation: T. Sakamoto et al., SPATIAL DISTRIBUTIONS OF INDIVIDUAL TRAPS IN A SI SIO2 INTERFACE/, JPN J A P 1, 36(3B), 1997, pp. 1380-1382

Authors: KAWAURA H SAKAMOTO T BABA T OCHIAI Y FUJITA J MATSUI S SONE J

Citation: H. Kawaura et al., PROPOSAL OF PSEUDO SOURCE AND DRAIN MOSFETS FOR EVALUATING 10-NM GATEMOSFETS, JPN J A P 1, 36(3B), 1997, pp. 1569-1573

Authors: SAKAMOTO T KAWAURA H BABA T FUJITA J OCHIAI Y

Citation: T. Sakamoto et al., FABRICATION OF 30 NM GATE LENGTH ELECTRICALLY VARIABLE SHALLOW-JUNCTION METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS USING A CALIXARENE RESIST, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(6), 1997, pp. 2806-2808