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Results: 1-25 | 26-50 | 51-51
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SUBSTITUTIONAL CARBON IMPURITIES IN THIN SILICON FILMS - EQUILIBRIUM STRUCTURE AND PROPERTIES
Authors: KELIRES PC KAXIRAS E
Citation: Pc. Kelires et E. Kaxiras, SUBSTITUTIONAL CARBON IMPURITIES IN THIN SILICON FILMS - EQUILIBRIUM STRUCTURE AND PROPERTIES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1687-1691
EFFECTS OF ALLOYING ON THE DUCTILITY OF MOSI2 SINGLE-CRYSTALS FROM FIRST-PRINCIPLES CALCULATIONS
Authors: WAGHMARE UV KAXIRAS E BULATOV VV DUESBERY MS
Citation: Uv. Waghmare et al., EFFECTS OF ALLOYING ON THE DUCTILITY OF MOSI2 SINGLE-CRYSTALS FROM FIRST-PRINCIPLES CALCULATIONS, Modelling and simulation in materials science and engineering, 6(4), 1998, pp. 493-506
AMORPHOUS-CRYSTAL INTERFACE IN SILICON - A TIGHT-BINDING SIMULATION
Authors: BERNSTEIN N AZIZ MJ KAXIRAS E
Citation: N. Bernstein et al., AMORPHOUS-CRYSTAL INTERFACE IN SILICON - A TIGHT-BINDING SIMULATION, Physical review. B, Condensed matter, 58(8), 1998, pp. 4579-4583
INTERATOMIC POTENTIAL FOR SILICON DEFECTS AND DISORDERED PHASES
Authors: JUSTO JF BAZANT MZ KAXIRAS E BULATOV VV YIP S
Citation: Jf. Justo et al., INTERATOMIC POTENTIAL FOR SILICON DEFECTS AND DISORDERED PHASES, Physical review. B, Condensed matter, 58(5), 1998, pp. 2539-2550
DIFFUSION OF ADSORBATE ATOMS ON THE RECONSTRUCTED SI(111) SURFACE
Authors: CHO KJ KAXIRAS E
Citation: Kj. Cho et E. Kaxiras, DIFFUSION OF ADSORBATE ATOMS ON THE RECONSTRUCTED SI(111) SURFACE, Surface science, 396(1-3), 1998, pp. 261-266
VACANCY IN SILICON REVISITED - STRUCTURE AND PRESSURE EFFECTS
Authors: ANTONELLI A KAXIRAS E CHADI DJ
Citation: A. Antonelli et al., VACANCY IN SILICON REVISITED - STRUCTURE AND PRESSURE EFFECTS, Physical review letters, 81(10), 1998, pp. 2088-2091
A DENSITY-FUNCTIONAL STUDY OF CLEAN AND HYDROGEN-COVERED ALPHA-MOO3(010) - ELECTRONIC-STRUCTURE AND SURFACE RELAXATION
Authors: CHEN M WAGHMARE UV FRIEND CM KAXIRAS E
Citation: M. Chen et al., A DENSITY-FUNCTIONAL STUDY OF CLEAN AND HYDROGEN-COVERED ALPHA-MOO3(010) - ELECTRONIC-STRUCTURE AND SURFACE RELAXATION, The Journal of chemical physics, 109(16), 1998, pp. 6854-6860
SLIP ENERGY BARRIERS IN ALUMINUM AND IMPLICATIONS FOR DUCTILE-BRITTLEBEHAVIOR
Authors: SUN YM KAXIRAS E
Citation: Ym. Sun et E. Kaxiras, SLIP ENERGY BARRIERS IN ALUMINUM AND IMPLICATIONS FOR DUCTILE-BRITTLEBEHAVIOR, Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties, 75(4), 1997, pp. 1117-1127
INTERMITTENT DIFFUSION ON THE RECONSTRUCTED SI(111) SURFACE
Authors: CHO K KAXIRAS E
Citation: K. Cho et E. Kaxiras, INTERMITTENT DIFFUSION ON THE RECONSTRUCTED SI(111) SURFACE, Europhysics letters, 39(3), 1997, pp. 287-292
SURFACE-RECONSTRUCTION-INDUCED GEOMETRIES OF SI CLUSTERS
Authors: KAXIRAS E
Citation: E. Kaxiras, SURFACE-RECONSTRUCTION-INDUCED GEOMETRIES OF SI CLUSTERS, Physical review. B, Condensed matter, 56(20), 1997, pp. 13455-13463
NONORTHOGONAL TIGHT-BINDING HAMILTONIANS FOR DEFECTS AND INTERFACES IN SILICON
Authors: BERNSTEIN N KAXIRAS E
Citation: N. Bernstein et E. Kaxiras, NONORTHOGONAL TIGHT-BINDING HAMILTONIANS FOR DEFECTS AND INTERFACES IN SILICON, Physical review. B, Condensed matter, 56(16), 1997, pp. 10488-10496
ENVIRONMENT-DEPENDENT INTERATOMIC POTENTIAL FOR BULK SILICON
Authors: BAZANT MZ KAXIRAS E JUSTO JF
Citation: Mz. Bazant et al., ENVIRONMENT-DEPENDENT INTERATOMIC POTENTIAL FOR BULK SILICON, Physical review. B, Condensed matter, 56(14), 1997, pp. 8542-8552
ADAPTIVE-COORDINATE REAL-SPACE ELECTRONIC-STRUCTURE CALCULATIONS FOR ATOMS, MOLECULES, AND SOLIDS
Authors: MODINE NA ZUMBACH G KAXIRAS E
Citation: Na. Modine et al., ADAPTIVE-COORDINATE REAL-SPACE ELECTRONIC-STRUCTURE CALCULATIONS FOR ATOMS, MOLECULES, AND SOLIDS, Physical review. B, Condensed matter, 55(16), 1997, pp. 10289-10301
THEORY OF ADSORPTION AND DESORPTION OF H-2-MOLECULES ON THE SI(111)-(7X7) SURFACE
Authors: CHO K KAXIRAS E JOANNOPOULOS JD
Citation: K. Cho et al., THEORY OF ADSORPTION AND DESORPTION OF H-2-MOLECULES ON THE SI(111)-(7X7) SURFACE, Physical review letters, 79(25), 1997, pp. 5078-5081
SEMIDISCRETE VARIATIONAL PEIERLS FRAMEWORK FOR DISLOCATION CORE PROPERTIES
Authors: BULATOV VV KAXIRAS E
Citation: Vv. Bulatov et E. Kaxiras, SEMIDISCRETE VARIATIONAL PEIERLS FRAMEWORK FOR DISLOCATION CORE PROPERTIES, Physical review letters, 78(22), 1997, pp. 4221-4224
ENERGETICS AND EQUILIBRIUM PROPERTIES OF THIN PSEUDOMORPHIC SI1-XCX(100) LAYERS IN SI
Authors: KELIRES PC KAXIRAS E
Citation: Pc. Kelires et E. Kaxiras, ENERGETICS AND EQUILIBRIUM PROPERTIES OF THIN PSEUDOMORPHIC SI1-XCX(100) LAYERS IN SI, Physical review letters, 78(18), 1997, pp. 3479-3482
GENERALIZED STACKING-FAULT ENERGY SURFACES AND DISLOCATION PROPERTIESOF SILICON - A FIRST-PRINCIPLES THEORETICAL-STUDY
Authors: JUAN YM KAXIRAS E
Citation: Ym. Juan et E. Kaxiras, GENERALIZED STACKING-FAULT ENERGY SURFACES AND DISLOCATION PROPERTIESOF SILICON - A FIRST-PRINCIPLES THEORETICAL-STUDY, Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties, 74(6), 1996, pp. 1367-1384
LEDGE EFFECTS ON DISLOCATION EMISSION FROM A CRACK-TIP - A FIRST-PRINCIPLES STUDY FOR SILICON
Authors: JUAN YM SUN YM KAXIRAS E
Citation: Ym. Juan et al., LEDGE EFFECTS ON DISLOCATION EMISSION FROM A CRACK-TIP - A FIRST-PRINCIPLES STUDY FOR SILICON, Philosophical magazine letters, 73(5), 1996, pp. 233-240
DYNAMIC SCALING IN CONSERVED SYSTEMS WITH COUPLED FIELDS - APPLICATION TO SURFACTANT-MEDIATED GROWTH
Authors: BARABASI AL KAXIRAS E
Citation: Al. Barabasi et E. Kaxiras, DYNAMIC SCALING IN CONSERVED SYSTEMS WITH COUPLED FIELDS - APPLICATION TO SURFACTANT-MEDIATED GROWTH, Europhysics letters, 36(2), 1996, pp. 129-134
AB-INITIO STUDIES OF DIFFUSION AND GROWTH PHENOMENA ON SEMICONDUCTOR SURFACES
Authors: KAXIRAS E
Citation: E. Kaxiras, AB-INITIO STUDIES OF DIFFUSION AND GROWTH PHENOMENA ON SEMICONDUCTOR SURFACES, Surface review and letters, 3(2), 1996, pp. 1295-1303
THEORY OF SURFACTANT-MEDIATED GROWTH ON SEMICONDUCTOR SURFACES
Authors: KAXIRAS E KANDEL D
Citation: E. Kaxiras et D. Kandel, THEORY OF SURFACTANT-MEDIATED GROWTH ON SEMICONDUCTOR SURFACES, Applied surface science, 102, 1996, pp. 3-5
AB-INITIO STUDY OF HYDROGEN ADSORPTION ON THE SI(111)-(7X7) SURFACE (VOL 52, PG 17231, 1995)
Authors: LIM H CHO K PARK I JOANNOPOULOS JD KAXIRAS E
Citation: H. Lim et al., AB-INITIO STUDY OF HYDROGEN ADSORPTION ON THE SI(111)-(7X7) SURFACE (VOL 52, PG 17231, 1995), Physical review. B, Condensed matter, 54(7), 1996, pp. 5179-5179
VARIATIONAL HILBERT-SPACE-TRUNCATION APPROACH TO QUANTUM HEISENBERG ANTIFERROMAGNETS ON FRUSTRATED CLUSTERS
Authors: MODINE NA KAXIRAS E
Citation: Na. Modine et E. Kaxiras, VARIATIONAL HILBERT-SPACE-TRUNCATION APPROACH TO QUANTUM HEISENBERG ANTIFERROMAGNETS ON FRUSTRATED CLUSTERS, Physical review. B, Condensed matter, 53(5), 1996, pp. 2546-2555
FREE-ENERGY OF THE CONCERTED-EXCHANGE MECHANISM FOR SELF-DIFFUSIONS IN SILICON
Authors: ANTONELLI A ISMAILBEIGI S KAXIRAS E PANDEY KC
Citation: A. Antonelli et al., FREE-ENERGY OF THE CONCERTED-EXCHANGE MECHANISM FOR SELF-DIFFUSIONS IN SILICON, Physical review. B, Condensed matter, 53(3), 1996, pp. 1310-1314
ATOMISTIC ASPECTS OF DIFFUSION AND GROWTH ON THE SI AND GE (111) SURFACES
Authors: KAXIRAS E
Citation: E. Kaxiras, ATOMISTIC ASPECTS OF DIFFUSION AND GROWTH ON THE SI AND GE (111) SURFACES, Thin solid films, 272(2), 1996, pp. 386-398
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