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Results: 1-12 |
Results: 12
MONTE-CARLO SIMULATIONS OF ION-ENHANCED ISLAND COARSENING
Authors: CHASON E KELLERMAN BK
Citation: E. Chason et Bk. Kellerman, MONTE-CARLO SIMULATIONS OF ION-ENHANCED ISLAND COARSENING, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 127, 1997, pp. 225-229
IN-SITU X-RAY REFLECTIVITY INVESTIGATION OF GROWTH AND SURFACE-MORPHOLOGY EVOLUTION DURING FE CHEMICAL-VAPOR-DEPOSITION ON SI(001)
Authors: KELLERMAN BK CHASON E ADAMS DP MAYER TM WHITE JM
Citation: Bk. Kellerman et al., IN-SITU X-RAY REFLECTIVITY INVESTIGATION OF GROWTH AND SURFACE-MORPHOLOGY EVOLUTION DURING FE CHEMICAL-VAPOR-DEPOSITION ON SI(001), Surface science, 375(2-3), 1997, pp. 331-339
ISLAND STRUCTURE EVOLUTION DURING CHEMICAL-VAPOR-DEPOSITION
Authors: ADAMS DP MAYER TM CHASON E KELLERMAN BK SWARTZENTRUBER BS
Citation: Dp. Adams et al., ISLAND STRUCTURE EVOLUTION DURING CHEMICAL-VAPOR-DEPOSITION, Surface science, 371(2-3), 1997, pp. 445-454
ADSORPTION AND DECOMPOSITION OF DIETHYLSILANE AND DIETHYLGERMANE ON SI(100) - SURFACE-REACTIONS FOR AN ATOMIC LAYER EPITAXIAL APPROACH TO COLUMN-IV EPITAXY
Authors: KELLERMAN BK MAHAJAN A RUSSELL NM EKERDT JG BANERJEE SK TASCH AF CAMPION A WHITE JM BONSER DJ
Citation: Bk. Kellerman et al., ADSORPTION AND DECOMPOSITION OF DIETHYLSILANE AND DIETHYLGERMANE ON SI(100) - SURFACE-REACTIONS FOR AN ATOMIC LAYER EPITAXIAL APPROACH TO COLUMN-IV EPITAXY, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 13(4), 1995, pp. 1819-1825
SURFACE-CHEMISTRY OF DIETHYLSILANE AND DIETHYLGERMANE ON GE(100)
Authors: MAHAJAN A KELLERMAN BK HEITZINGER JM BANERJEE S TASCH A WHITE JM EKERDT JG
Citation: A. Mahajan et al., SURFACE-CHEMISTRY OF DIETHYLSILANE AND DIETHYLGERMANE ON GE(100), Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 13(3), 1995, pp. 1461-1468
DEFECT PRODUCTION AND RECOMBINATION DURING LOW-ENERGY ION PROCESSING
Authors: KELLERMAN BK FLORO JA CHASON E BRICE DK PICRAUX ST WHITE JM
Citation: Bk. Kellerman et al., DEFECT PRODUCTION AND RECOMBINATION DURING LOW-ENERGY ION PROCESSING, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 13(3), 1995, pp. 972-978
TEMPERATURE-PROGRAMMED EVOLUTION OF LOW-ENERGY, RARE-GAS IONS IMPLANTED IN SI(100) (VOL 330, PG L633, 1995)
Authors: TESAURO MR UNDERWOOD G KELLERMAN BK CAMPION A
Citation: Mr. Tesauro et al., TEMPERATURE-PROGRAMMED EVOLUTION OF LOW-ENERGY, RARE-GAS IONS IMPLANTED IN SI(100) (VOL 330, PG L633, 1995), Surface science, 340(1-2), 1995, pp. 997-997
TEMPERATURE-PROGRAMMED EVOLUTION OF LOW-ENERGY, RARE-GAS IONS IMPLANTED IN SI(100)
Authors: TESAURO MR UNDERWOOD G KELLERMAN BK CAMPION A
Citation: Mr. Tesauro et al., TEMPERATURE-PROGRAMMED EVOLUTION OF LOW-ENERGY, RARE-GAS IONS IMPLANTED IN SI(100), Surface science, 330(1), 1995, pp. 633-638
SURFACE DEFECT PRODUCTION ON GE(001) DURING LOW-ENERGY ION-BOMBARDMENT
Authors: FLORO JA KELLERMAN BK CHASON E PICRAUX ST BRICE DK HORN KM
Citation: Ja. Floro et al., SURFACE DEFECT PRODUCTION ON GE(001) DURING LOW-ENERGY ION-BOMBARDMENT, Journal of applied physics, 77(6), 1995, pp. 2351-2357
THE ROLE OF TRANSIENT ION-INDUCED DEFECTS IN ION-BEAM-ASSISTED GROWTH
Authors: KELLERMAN BK CHASON E FLORO JA PICRAUX ST WHITE JM
Citation: Bk. Kellerman et al., THE ROLE OF TRANSIENT ION-INDUCED DEFECTS IN ION-BEAM-ASSISTED GROWTH, Applied physics letters, 67(12), 1995, pp. 1703-1705
SURFACE-CHEMISTRY OF DIETHYLSILANE AND DIETHYLGERMANE ON SI(100) - ANATOMIC LAYER EPITAXY APPROACH
Authors: MAHAJAN A KELLERMAN BK RUSSELL NM BANERJEE S CAMPION A EKERDT JG TASCH A WHITE JM BONSER DJ
Citation: A. Mahajan et al., SURFACE-CHEMISTRY OF DIETHYLSILANE AND DIETHYLGERMANE ON SI(100) - ANATOMIC LAYER EPITAXY APPROACH, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 12(4), 1994, pp. 2265-2270
ROUGHENING INSTABILITY AND EVOLUTION OF THE GE(001) SURFACE DURING ION SPUTTERING
Authors: CHASON E MAYER TM KELLERMAN BK MCILROY DT HOWARD AJ
Citation: E. Chason et al., ROUGHENING INSTABILITY AND EVOLUTION OF THE GE(001) SURFACE DURING ION SPUTTERING, Physical review letters, 72(19), 1994, pp. 3040-3043
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