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Results: 1-13 |
Results: 13
PROXIMITY GETTERING OF PLATINUM IN PROTON-IRRADIATED SILICON
Authors: SCHMIDT DC SVENSSON BG KESKITALO N GODEY S NTSOENZOK E BARBOT JF BLANCHARD C
Citation: Dc. Schmidt et al., PROXIMITY GETTERING OF PLATINUM IN PROTON-IRRADIATED SILICON, Journal of applied physics, 84(8), 1998, pp. 4214-4218
ELECTRICALLY ACTIVE POINT-DEFECTS IN N-TYPE 4H-SIC
Authors: DOYLE JP LINNARSSON MK PELLEGRINO P KESKITALO N SVENSSON BG SCHONER A NORDELL N LINDSTROM JL
Citation: Jp. Doyle et al., ELECTRICALLY ACTIVE POINT-DEFECTS IN N-TYPE 4H-SIC, Journal of applied physics, 84(3), 1998, pp. 1354-1357
TEMPERATURE AND INJECTION DEPENDENCE OF THE SHOCKLEY-READ-HALL LIFETIME IN ELECTRON-IRRADIATED P-TYPE SILICON
Authors: KESKITALO N JONSSON P NORDGREN K BLEICHNER H NORDLANDER E
Citation: N. Keskitalo et al., TEMPERATURE AND INJECTION DEPENDENCE OF THE SHOCKLEY-READ-HALL LIFETIME IN ELECTRON-IRRADIATED P-TYPE SILICON, Journal of applied physics, 83(8), 1998, pp. 4206-4212
PHYSICAL MODELS IN DEVICE SIMULATION OF SI POWER PIN-DIODES FOR OPTIMAL FITTING OF SIMULATION RESULTS TO MEASURED DATA
Authors: ISBERG M JONSSON P KESKITALO N MASSZI F BLEICHER H
Citation: M. Isberg et al., PHYSICAL MODELS IN DEVICE SIMULATION OF SI POWER PIN-DIODES FOR OPTIMAL FITTING OF SIMULATION RESULTS TO MEASURED DATA, Compel, 16(3), 1997, pp. 144
IMPROVED LIFETIME CHARACTERISTICS IN HEAVY-ION IRRADIATED SILICON
Authors: KESKITALO N HALLEN A JOSYULA L SVENSSON BG
Citation: N. Keskitalo et al., IMPROVED LIFETIME CHARACTERISTICS IN HEAVY-ION IRRADIATED SILICON, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 127, 1997, pp. 410-413
ELECTRICAL INVESTIGATION OF THE SILICON DIAMOND INTERFACE/
Authors: EDHOLM B OLSSON J KESKITALO N VESTLING L
Citation: B. Edholm et al., ELECTRICAL INVESTIGATION OF THE SILICON DIAMOND INTERFACE/, Microelectronic engineering, 36(1-4), 1997, pp. 245-248
DEFECT EVOLUTION IN MEV ION-IMPLANTED SILICON
Authors: LALITA J KESKITALO N HALLEN A JAGADISH C SVENSSON BG
Citation: J. Lalita et al., DEFECT EVOLUTION IN MEV ION-IMPLANTED SILICON, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 120(1-4), 1996, pp. 27-32
SIMULATION OF FORWARD BIAS INJECTION IN PROTON-IRRADIATED SILICON PN-JUNCTIONS
Authors: KESKITALO N HALLEN A MASSZI F OLSSON J
Citation: N. Keskitalo et al., SIMULATION OF FORWARD BIAS INJECTION IN PROTON-IRRADIATED SILICON PN-JUNCTIONS, Solid-state electronics, 39(7), 1996, pp. 1087-1092
LIFETIME IN PROTON-IRRADIATED SILICON
Authors: HALLEN A KESKITALO N MASSZI F NAGL V
Citation: A. Hallen et al., LIFETIME IN PROTON-IRRADIATED SILICON, Journal of applied physics, 79(8), 1996, pp. 3906-3914
TEMPERATURE AND INJECTION DEPENDENCE OF THE SHOCKLEY-READ-HALL LIFETIME IN ELECTRON-IRRADIATED N-TYPE SILICON
Authors: BLEICHNER H JONSSON P KESKITALO N NORDLANDER E
Citation: H. Bleichner et al., TEMPERATURE AND INJECTION DEPENDENCE OF THE SHOCKLEY-READ-HALL LIFETIME IN ELECTRON-IRRADIATED N-TYPE SILICON, Journal of applied physics, 79(12), 1996, pp. 9142-9148
MEV-ION-INDUCED DEFECTS IN ORGANIC-CRYSTALS
Authors: KOPNICZKY J HALLEN A KESKITALO N REIMANN CT SUNDQVIST BUR
Citation: J. Kopniczky et al., MEV-ION-INDUCED DEFECTS IN ORGANIC-CRYSTALS, Radiation measurements, 25(1-4), 1995, pp. 47-50
VACANCY RELATED DEFECT PROFILES IN MEV CLUSTER-ION IRRADIATED SILICON
Authors: HALLEN A HAKANSSON P KESKITALO N OLSSON J BRUNELLE A
Citation: A. Hallen et al., VACANCY RELATED DEFECT PROFILES IN MEV CLUSTER-ION IRRADIATED SILICON, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 106(1-4), 1995, pp. 233-236
RESISTIVITY PROFILE MEASUREMENTS OF PROTON-IRRADIATED N-TYPE SILICON
Authors: KESKITALO N HALLEN A
Citation: N. Keskitalo et A. Hallen, RESISTIVITY PROFILE MEASUREMENTS OF PROTON-IRRADIATED N-TYPE SILICON, Solid-state electronics, 37(1), 1994, pp. 55-60
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