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Results: 1-14 |
Results: 14
ELECTROLUMINESCENCE AND PHOTOLUMINESCENCE EFFICIENCY OF POLY(P-PHENYLENEVINYLENE) DERIVATIVES
Authors: STARING EGJ DEMANDT RCJE BRAUN D RIKKEN GLJ KESSENER YARR VENHUIZEN AHJ VANKNIPPENBERG MMF BOUWMANS M
Citation: Egj. Staring et al., ELECTROLUMINESCENCE AND PHOTOLUMINESCENCE EFFICIENCY OF POLY(P-PHENYLENEVINYLENE) DERIVATIVES, Synthetic metals, 71(1-3), 1995, pp. 2179-2180
LOCAL-FIELD EFFECTS AND ELECTRIC AND MAGNETIC DIPOLE TRANSITIONS IN DIELECTRICS
Authors: RIKKEN GLJA KESSENER YARR
Citation: Glja. Rikken et Yarr. Kessener, LOCAL-FIELD EFFECTS AND ELECTRIC AND MAGNETIC DIPOLE TRANSITIONS IN DIELECTRICS, Physical review letters, 74(6), 1995, pp. 880-883
MEASUREMENT OF ABSOLUTE PHOTOLUMINESCENCE QUANTUM EFFICIENCIES IN CONJUGATED POLYMERS
Authors: GREENHAM NC SAMUEL IDW HAYES GR PHILLIPS RT KESSENER YARR MORATTI SC HOLMES AB FRIEND RH
Citation: Nc. Greenham et al., MEASUREMENT OF ABSOLUTE PHOTOLUMINESCENCE QUANTUM EFFICIENCIES IN CONJUGATED POLYMERS, Chemical physics letters, 241(1-2), 1995, pp. 89-96
PHOTOLUMINESCENCE AND ELECTROLUMINESCENCE EFFICIENCY IN SOLUBLE POLY(DIALKYL-P-PHENYLENEVINYLENE)
Authors: STARING EGJ DEMANDT RCJE BRAUN D RIKKEN GLJ KESSENER YARR VENHUIZEN THJ WYNBERG H TENHOEVE W SPOELSTRA KJ
Citation: Egj. Staring et al., PHOTOLUMINESCENCE AND ELECTROLUMINESCENCE EFFICIENCY IN SOLUBLE POLY(DIALKYL-P-PHENYLENEVINYLENE), Advanced materials, 6(12), 1994, pp. 934-937
CHEMICAL-VAPOR-DEPOSITION OF POLY(1,4-PHENYLENEVINYLENE) FILMS
Authors: STARING EGJ BRAUN D RIKKEN GLJA DEMANDT RJCE KESSENER YARR BOUWMANS M BROER D
Citation: Egj. Staring et al., CHEMICAL-VAPOR-DEPOSITION OF POLY(1,4-PHENYLENEVINYLENE) FILMS, Synthetic metals, 67(1-3), 1994, pp. 71-75
INTERNAL PHOTOEMISSION-STUDIES OF METAL-POLYMER INTERFACES
Authors: RIKKEN GLJA KESSENER YARR BRAUN D STARING EGJ DEMANDT R
Citation: Glja. Rikken et al., INTERNAL PHOTOEMISSION-STUDIES OF METAL-POLYMER INTERFACES, Synthetic metals, 67(1-3), 1994, pp. 115-119
PHOTOLUMINESCENCE AND ELECTROLUMINESCENCE EFFICIENCY IN POLY(DIALKOXY-P-PHENYLENEVINYLENE)
Authors: BRAUN D STARING EGJ DEMANDT RCJE RIKKEN GLJ KESSENER YARR VENHUIZEN AHJ
Citation: D. Braun et al., PHOTOLUMINESCENCE AND ELECTROLUMINESCENCE EFFICIENCY IN POLY(DIALKOXY-P-PHENYLENEVINYLENE), Synthetic metals, 66(1), 1994, pp. 75-79
INCORPORATION OF ND IN PULSED-LASER-DEPOSITED COMPARED TO ION-IMPLANTED SRTIO3
Authors: OVERWIJK MHF CILLESSEN JFM KESSENER YARR TENNER MG
Citation: Mhf. Overwijk et al., INCORPORATION OF ND IN PULSED-LASER-DEPOSITED COMPARED TO ION-IMPLANTED SRTIO3, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 91(1-4), 1994, pp. 322-326
BEHAVIOR OF A RECTIFYING JUNCTION AT THE INTERFACE BETWEEN POROUS SILICON AND ITS SUBSTRATE
Authors: PULSFORD NJ RIKKEN GLJA KESSENER YARR LOUS EJ VENHUIZEN AHJ
Citation: Nj. Pulsford et al., BEHAVIOR OF A RECTIFYING JUNCTION AT THE INTERFACE BETWEEN POROUS SILICON AND ITS SUBSTRATE, Journal of applied physics, 75(1), 1994, pp. 636-638
INCORPORATION OF ND IMPLANTED IN STRONTIUMTITANATE STUDIED WITH PHOTOLUMINESCENCE
Authors: TENNER MG KESSENER YARR OVERWIJK MHF
Citation: Mg. Tenner et al., INCORPORATION OF ND IMPLANTED IN STRONTIUMTITANATE STUDIED WITH PHOTOLUMINESCENCE, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 80-1, 1993, pp. 1185-1188
QUENCHING OF POROUS SILICON LUMINESCENCE AT INTERMEDIATE TEMPERATURES
Authors: KESSENER YARR RIKKEN GLJA VENHUIZEN AHJ
Citation: Yarr. Kessener et al., QUENCHING OF POROUS SILICON LUMINESCENCE AT INTERMEDIATE TEMPERATURES, Journal of luminescence, 57(1-6), 1993, pp. 77-81
CARRIER INJECTION AND TRANSPORT IN POROUS SILICON SCHOTTKY DIODES
Authors: PULSFORD NJ RIKKEN GLJA KESSENER YARR LOUS EJ VENHUIZEN AHJ
Citation: Nj. Pulsford et al., CARRIER INJECTION AND TRANSPORT IN POROUS SILICON SCHOTTKY DIODES, Journal of luminescence, 57(1-6), 1993, pp. 181-184
TEMPERATURE-DEPENDENCE OF THE RADIATIVE LIFETIME IN POROUS SILICON - REPLY
Authors: RIKKEN GLJA THOOFT GW KESSENER YARR VENHUIZEN AHJ
Citation: Glja. Rikken et al., TEMPERATURE-DEPENDENCE OF THE RADIATIVE LIFETIME IN POROUS SILICON - REPLY, Applied physics letters, 63(4), 1993, pp. 566-566
PHOTOLUMINESCENCE STUDY OF SI DELTA-DOPED GAAS
Authors: HENNING JCM KESSENER YARR KOENRAAD PM LEYS MR VANDERVLEUTEN W WOLTER JH FRENS AM
Citation: Jcm. Henning et al., PHOTOLUMINESCENCE STUDY OF SI DELTA-DOPED GAAS, Semiconductor science and technology, 6(11), 1991, pp. 1079-1087
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