Authors:
BOLLONG AB
FELDEWERTH G
TOWER JP
TOBIN SP
KESTIGIAN M
NORTON PW
SCHAAKE HF
ARD CK
Citation: Ab. Bollong et al., IMPURITY STUDY OF CDZNTE SUBSTRATES USED FOR LPE HGCDTE, Advanced materials for optics and electronics, 5(2), 1995, pp. 87-99
Authors:
MITRA P
SCHIMERT TR
CASE FC
BARNES SL
REINE MB
STARR R
WEILER MH
KESTIGIAN M
Citation: P. Mitra et al., METALORGANIC CHEMICAL-VAPOR-DEPOSITION OF HGCDTE P N JUNCTIONS USING ARSENIC AND IODINE DOPING/, Journal of electronic materials, 24(9), 1995, pp. 1077-1085
Authors:
RAO V
EHSANI H
BHAT IB
KESTIGIAN M
STARR R
WEILER MH
REINE MB
Citation: V. Rao et al., METALORGANIC VAPOR-PHASE EPITAXY IN-SITU GROWTH OF P-ON-N AND N-ON-P HG1-XCDXTE JUNCTION PHOTODIODES USING TERTIARYBUTYLARSINE AS THE ACCEPTOR SOURCE, Journal of electronic materials, 24(5), 1995, pp. 437-443
Authors:
TOWER JP
TOBIN SP
KESTIGIAN M
NORTON PW
BOLLONG AB
SCHAAKE HF
ARD CK
Citation: Jp. Tower et al., CDZNTE SUBSTRATE IMPURITIES AND THEIR EFFECTS ON LIQUID-PHASE EPITAXYHGCDTE, Journal of electronic materials, 24(5), 1995, pp. 497-504
Authors:
MITRA P
SCHIMERT TR
CASE FC
STARR R
WEILER MH
KESTIGIAN M
REINE MB
Citation: P. Mitra et al., METALORGANIC CHEMICAL-VAPOR-DEPOSITION OF HGCDTE FOR PHOTODIODE APPLICATIONS, Journal of electronic materials, 24(5), 1995, pp. 661-668
Authors:
REINE MB
NORTON PW
STARR R
WEILER MH
KESTIGIAN M
MUSICANT BL
MITRA P
SCHIMERT T
CASE FC
BHAT IB
EHSANI H
RAO V
Citation: Mb. Reine et al., INDEPENDENTLY ACCESSED BACK-TO-BACK HGCDTE PHOTODIODES - A NEW DUAL-BAND INFRARED DETECTOR, Journal of electronic materials, 24(5), 1995, pp. 669-679