Authors:
GAUTIER S
KOUMETZ S
MARCON J
KETATA K
KETATA M
Citation: S. Gautier et al., STUDY OF BERYLLIUM DIFFUSION MECHANISMS IN INGAAS EPITAXIAL LAYERS GROWN BY CBE, Modelling and simulation in materials science and engineering, 6(2), 1998, pp. 99-110
Authors:
MARCON J
GAUTIER S
KOUMETZ S
KETATA K
KETATA M
Citation: J. Marcon et al., INVESTIGATION OF BE DIFFUSION IN INGAAS USING KICK-OUT MECHANISM, Computational materials science, 10(1-4), 1998, pp. 28-32
Authors:
MARCON J
KOUMETZ S
KETATA K
KETATA M
LAUNAY P
Citation: J. Marcon et al., BERYLLIUM DIFFUSION IN INGAAS EPITAXIAL LAYERS - A POINT-DEFECT NONEQUILIBRIUM MODEL, Materials science & engineering. B, Solid-state materials for advanced technology, 44(1-3), 1997, pp. 78-81
Authors:
MARCON J
GAUTIER S
KOUMETZ S
KETATA K
KETATA M
LAUNAY P
Citation: J. Marcon et al., P-TYPE DIFFUSION IN INGAAS EPITAXIAL LAYERS USING 2 MODELS - A CONCENTRATION-DEPENDENT DIFFUSIVITY AND A POINT-DEFECT NONEQUILIBRIUM, Solid state communications, 101(3), 1997, pp. 159-162
Authors:
KOUMETZ S
MARCON J
KETATA K
KETATA M
LAUNAY P
Citation: S. Koumetz et al., BERYLLIUM DIFFUSION IN INGAAS COMPOUNDS GROWN BY CHEMICAL BEAM EPITAXY, Journal of physics. D, Applied physics, 30(5), 1997, pp. 757-762
Citation: K. Ketata et al., A COMPARATIVE SECONDARY-ION MASS-SPECTROMETRY TECHNIQUE FOR EVALUATION OF METALLIC IMPURITY ON SILICON SURFACE, Materials science & engineering. B, Solid-state materials for advanced technology, 33(2-3), 1995, pp. 1-5
Citation: O. Latry et al., OPTIMIZATION OF THE COUPLING BETWEEN A TAPERED FIBER AND A P-I-N PHOTODIODE, Journal of physics. D, Applied physics, 28(8), 1995, pp. 1562-1572
Authors:
KETATA K
KOUMETZ S
LATRY O
KETATA M
DEBRIE R
Citation: K. Ketata et al., PARAMETRIC INVESTIGATIONS AND SIMULATIONS OF ION-BEAM ETCHING AND REACTIVE ION ETCHING MECHANISMS FOR GAAS COMPOUNDS, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 383-386
Authors:
KETATA M
KETATA K
DUBONCHEVALLIER C
DEBRIE R
Citation: M. Ketata et al., DEPOSITION AND ETCHING OF REFRACTORY OHMIC CONTACTS TO GAAS FOR SELF-ALIGNED TECHNOLOGY, Journal of physics. D, Applied physics, 26(11), 1993, pp. 2055-2060