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Results: 1-12 |

Results: 12

STUDY OF BERYLLIUM DIFFUSION MECHANISMS IN INGAAS EPITAXIAL LAYERS GROWN BY CBE

Authors: GAUTIER S KOUMETZ S MARCON J KETATA K KETATA M

Citation: S. Gautier et al., STUDY OF BERYLLIUM DIFFUSION MECHANISMS IN INGAAS EPITAXIAL LAYERS GROWN BY CBE, Modelling and simulation in materials science and engineering, 6(2), 1998, pp. 99-110

INVESTIGATION OF BE DIFFUSION IN INGAAS USING KICK-OUT MECHANISM

Authors: MARCON J GAUTIER S KOUMETZ S KETATA K KETATA M

Citation: J. Marcon et al., INVESTIGATION OF BE DIFFUSION IN INGAAS USING KICK-OUT MECHANISM, Computational materials science, 10(1-4), 1998, pp. 28-32

BE DIFFUSION IN GAINAS HOMOJUNCTION STRUCTURE GROWN BY CBE

Authors: GAUTIER S KOUMETZ S MARCON J KETATA K KETATA M

Citation: S. Gautier et al., BE DIFFUSION IN GAINAS HOMOJUNCTION STRUCTURE GROWN BY CBE, Solid state communications, 106(9), 1998, pp. 573-576

BERYLLIUM DIFFUSION IN INGAAS EPITAXIAL LAYERS - A POINT-DEFECT NONEQUILIBRIUM MODEL

Authors: MARCON J KOUMETZ S KETATA K KETATA M LAUNAY P

Citation: J. Marcon et al., BERYLLIUM DIFFUSION IN INGAAS EPITAXIAL LAYERS - A POINT-DEFECT NONEQUILIBRIUM MODEL, Materials science & engineering. B, Solid-state materials for advanced technology, 44(1-3), 1997, pp. 78-81

P-TYPE DIFFUSION IN INGAAS EPITAXIAL LAYERS USING 2 MODELS - A CONCENTRATION-DEPENDENT DIFFUSIVITY AND A POINT-DEFECT NONEQUILIBRIUM

Authors: MARCON J GAUTIER S KOUMETZ S KETATA K KETATA M LAUNAY P

Citation: J. Marcon et al., P-TYPE DIFFUSION IN INGAAS EPITAXIAL LAYERS USING 2 MODELS - A CONCENTRATION-DEPENDENT DIFFUSIVITY AND A POINT-DEFECT NONEQUILIBRIUM, Solid state communications, 101(3), 1997, pp. 159-162

BERYLLIUM DIFFUSION IN INGAAS COMPOUNDS GROWN BY CHEMICAL BEAM EPITAXY

Authors: KOUMETZ S MARCON J KETATA K KETATA M LAUNAY P

Citation: S. Koumetz et al., BERYLLIUM DIFFUSION IN INGAAS COMPOUNDS GROWN BY CHEMICAL BEAM EPITAXY, Journal of physics. D, Applied physics, 30(5), 1997, pp. 757-762

POSTGROWTH DIFFUSION OF BE-DOPED INGAAS EPITAXIAL LAYERS - EXPERIMENTAL AND SIMULATED DISTRIBUTIONS

Authors: KOUMETZ S MARCON J KETATA K KETATA M LEFEBVRE F MARTIN P LAUNAY P

Citation: S. Koumetz et al., POSTGROWTH DIFFUSION OF BE-DOPED INGAAS EPITAXIAL LAYERS - EXPERIMENTAL AND SIMULATED DISTRIBUTIONS, Materials science & engineering. B, Solid-state materials for advanced technology, 37(1-3), 1996, pp. 208-211

A COMPARATIVE SECONDARY-ION MASS-SPECTROMETRY TECHNIQUE FOR EVALUATION OF METALLIC IMPURITY ON SILICON SURFACE

Authors: KETATA K MASMOUDI M KETATA M DEBRIE R

Citation: K. Ketata et al., A COMPARATIVE SECONDARY-ION MASS-SPECTROMETRY TECHNIQUE FOR EVALUATION OF METALLIC IMPURITY ON SILICON SURFACE, Materials science & engineering. B, Solid-state materials for advanced technology, 33(2-3), 1995, pp. 1-5

OPTIMIZATION OF THE COUPLING BETWEEN A TAPERED FIBER AND A P-I-N PHOTODIODE

Authors: LATRY O KETATA M KETATA K DEBRIE R

Citation: O. Latry et al., OPTIMIZATION OF THE COUPLING BETWEEN A TAPERED FIBER AND A P-I-N PHOTODIODE, Journal of physics. D, Applied physics, 28(8), 1995, pp. 1562-1572

BE DIFFUSION MECHANISMS IN INGAAS DURING POSTGROWTH ANNEALING

Authors: KOUMETZ S MARCON J KETATA K KETATA M DUBONCHEVALLIER C LAUNAY P BENCHIMOL JL

Citation: S. Koumetz et al., BE DIFFUSION MECHANISMS IN INGAAS DURING POSTGROWTH ANNEALING, Applied physics letters, 67(15), 1995, pp. 2161-2163

PARAMETRIC INVESTIGATIONS AND SIMULATIONS OF ION-BEAM ETCHING AND REACTIVE ION ETCHING MECHANISMS FOR GAAS COMPOUNDS

Authors: KETATA K KOUMETZ S LATRY O KETATA M DEBRIE R

Citation: K. Ketata et al., PARAMETRIC INVESTIGATIONS AND SIMULATIONS OF ION-BEAM ETCHING AND REACTIVE ION ETCHING MECHANISMS FOR GAAS COMPOUNDS, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 383-386

DEPOSITION AND ETCHING OF REFRACTORY OHMIC CONTACTS TO GAAS FOR SELF-ALIGNED TECHNOLOGY

Authors: KETATA M KETATA K DUBONCHEVALLIER C DEBRIE R

Citation: M. Ketata et al., DEPOSITION AND ETCHING OF REFRACTORY OHMIC CONTACTS TO GAAS FOR SELF-ALIGNED TECHNOLOGY, Journal of physics. D, Applied physics, 26(11), 1993, pp. 2055-2060

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