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Results: 1-16 |
Results: 16
STUDY OF BERYLLIUM DIFFUSION MECHANISMS IN INGAAS EPITAXIAL LAYERS GROWN BY CBE
Authors: GAUTIER S KOUMETZ S MARCON J KETATA K KETATA M
Citation: S. Gautier et al., STUDY OF BERYLLIUM DIFFUSION MECHANISMS IN INGAAS EPITAXIAL LAYERS GROWN BY CBE, Modelling and simulation in materials science and engineering, 6(2), 1998, pp. 99-110
INVESTIGATION OF BE DIFFUSION IN INGAAS USING KICK-OUT MECHANISM
Authors: MARCON J GAUTIER S KOUMETZ S KETATA K KETATA M
Citation: J. Marcon et al., INVESTIGATION OF BE DIFFUSION IN INGAAS USING KICK-OUT MECHANISM, Computational materials science, 10(1-4), 1998, pp. 28-32
BE DIFFUSION IN GAINAS HOMOJUNCTION STRUCTURE GROWN BY CBE
Authors: GAUTIER S KOUMETZ S MARCON J KETATA K KETATA M
Citation: S. Gautier et al., BE DIFFUSION IN GAINAS HOMOJUNCTION STRUCTURE GROWN BY CBE, Solid state communications, 106(9), 1998, pp. 573-576
BERYLLIUM DIFFUSION IN INGAAS EPITAXIAL LAYERS - A POINT-DEFECT NONEQUILIBRIUM MODEL
Authors: MARCON J KOUMETZ S KETATA K KETATA M LAUNAY P
Citation: J. Marcon et al., BERYLLIUM DIFFUSION IN INGAAS EPITAXIAL LAYERS - A POINT-DEFECT NONEQUILIBRIUM MODEL, Materials science & engineering. B, Solid-state materials for advanced technology, 44(1-3), 1997, pp. 78-81
CHRONIC CONTAINED RUPTURE OF THE INFRAREN AL AORTA WITHOUT ANEURYSM -A CASE-REPORT
Authors: CAZABANMAZEROLLES D KETATA M THANWERDAS J MOURLANETTE J MAROTEIX F
Citation: D. Cazabanmazerolles et al., CHRONIC CONTAINED RUPTURE OF THE INFRAREN AL AORTA WITHOUT ANEURYSM -A CASE-REPORT, Journal des maladies vasculaires, 22(1), 1997, pp. 40-42
P-TYPE DIFFUSION IN INGAAS EPITAXIAL LAYERS USING 2 MODELS - A CONCENTRATION-DEPENDENT DIFFUSIVITY AND A POINT-DEFECT NONEQUILIBRIUM
Authors: MARCON J GAUTIER S KOUMETZ S KETATA K KETATA M LAUNAY P
Citation: J. Marcon et al., P-TYPE DIFFUSION IN INGAAS EPITAXIAL LAYERS USING 2 MODELS - A CONCENTRATION-DEPENDENT DIFFUSIVITY AND A POINT-DEFECT NONEQUILIBRIUM, Solid state communications, 101(3), 1997, pp. 159-162
BERYLLIUM DIFFUSION IN INGAAS COMPOUNDS GROWN BY CHEMICAL BEAM EPITAXY
Authors: KOUMETZ S MARCON J KETATA K KETATA M LAUNAY P
Citation: S. Koumetz et al., BERYLLIUM DIFFUSION IN INGAAS COMPOUNDS GROWN BY CHEMICAL BEAM EPITAXY, Journal of physics. D, Applied physics, 30(5), 1997, pp. 757-762
SIMULATION OF BERYLLIUM DIFFUSION IN THE BASE LAYER OF INGAAS INP HETEROJUNCTION BIPOLAR-TRANSISTORS/
Authors: MARCON J KOUMETZ S KETATA M LAUNAY P
Citation: J. Marcon et al., SIMULATION OF BERYLLIUM DIFFUSION IN THE BASE LAYER OF INGAAS INP HETEROJUNCTION BIPOLAR-TRANSISTORS/, Modelling and simulation in materials science and engineering, 4(5), 1996, pp. 443-454
POSTGROWTH DIFFUSION OF BE-DOPED INGAAS EPITAXIAL LAYERS - EXPERIMENTAL AND SIMULATED DISTRIBUTIONS
Authors: KOUMETZ S MARCON J KETATA K KETATA M LEFEBVRE F MARTIN P LAUNAY P
Citation: S. Koumetz et al., POSTGROWTH DIFFUSION OF BE-DOPED INGAAS EPITAXIAL LAYERS - EXPERIMENTAL AND SIMULATED DISTRIBUTIONS, Materials science & engineering. B, Solid-state materials for advanced technology, 37(1-3), 1996, pp. 208-211
THE STUDY OF THE RADIANCE VARIATION BETWE EN 2 PIXELS FOR THEIR STEREO VISION MATCHING
Authors: BENSRHAIR A MICHE P DEBRIE R KETATA M
Citation: A. Bensrhair et al., THE STUDY OF THE RADIANCE VARIATION BETWE EN 2 PIXELS FOR THEIR STEREO VISION MATCHING, Journal of optics, 27(4), 1996, pp. 183-190
A COMPARATIVE SECONDARY-ION MASS-SPECTROMETRY TECHNIQUE FOR EVALUATION OF METALLIC IMPURITY ON SILICON SURFACE
Authors: KETATA K MASMOUDI M KETATA M DEBRIE R
Citation: K. Ketata et al., A COMPARATIVE SECONDARY-ION MASS-SPECTROMETRY TECHNIQUE FOR EVALUATION OF METALLIC IMPURITY ON SILICON SURFACE, Materials science & engineering. B, Solid-state materials for advanced technology, 33(2-3), 1995, pp. 1-5
OPTIMIZATION OF THE COUPLING BETWEEN A TAPERED FIBER AND A P-I-N PHOTODIODE
Authors: LATRY O KETATA M KETATA K DEBRIE R
Citation: O. Latry et al., OPTIMIZATION OF THE COUPLING BETWEEN A TAPERED FIBER AND A P-I-N PHOTODIODE, Journal of physics. D, Applied physics, 28(8), 1995, pp. 1562-1572
BE DIFFUSION MECHANISMS IN INGAAS DURING POSTGROWTH ANNEALING
Authors: KOUMETZ S MARCON J KETATA K KETATA M DUBONCHEVALLIER C LAUNAY P BENCHIMOL JL
Citation: S. Koumetz et al., BE DIFFUSION MECHANISMS IN INGAAS DURING POSTGROWTH ANNEALING, Applied physics letters, 67(15), 1995, pp. 2161-2163
VERY LARGE INGUINAL-HERNIAS CAN ALSO BE T REATED UNDER LOCAL-ANESTHESIA
Authors: CHIOTASSO P KETATA M
Citation: P. Chiotasso et M. Ketata, VERY LARGE INGUINAL-HERNIAS CAN ALSO BE T REATED UNDER LOCAL-ANESTHESIA, Annales de chirurgie, 49(10), 1995, pp. 936-940
PARAMETRIC INVESTIGATIONS AND SIMULATIONS OF ION-BEAM ETCHING AND REACTIVE ION ETCHING MECHANISMS FOR GAAS COMPOUNDS
Authors: KETATA K KOUMETZ S LATRY O KETATA M DEBRIE R
Citation: K. Ketata et al., PARAMETRIC INVESTIGATIONS AND SIMULATIONS OF ION-BEAM ETCHING AND REACTIVE ION ETCHING MECHANISMS FOR GAAS COMPOUNDS, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 383-386
DEPOSITION AND ETCHING OF REFRACTORY OHMIC CONTACTS TO GAAS FOR SELF-ALIGNED TECHNOLOGY
Authors: KETATA M KETATA K DUBONCHEVALLIER C DEBRIE R
Citation: M. Ketata et al., DEPOSITION AND ETCHING OF REFRACTORY OHMIC CONTACTS TO GAAS FOR SELF-ALIGNED TECHNOLOGY, Journal of physics. D, Applied physics, 26(11), 1993, pp. 2055-2060
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