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Authors: HUANG CL FARICELLI JV ANTONIADIS DA KHALIL NA RIOS RA

Citation: Cl. Huang et al., AN ACCURATE GATE LENGTH EXTRACTION METHOD FOR SUB-QUARTER MICRON MOSFETS, I.E.E.E. transactions on electron devices, 43(6), 1996, pp. 958-964

Authors: HUANG CL KHALIL NA ARORA ND ZETTERLUND B BAIR LA

Citation: Cl. Huang et al., EFFECTS OF SOURCE DRAIN IMPLANTS ON SHORT-CHANNEL MOSFET-I-V AND C-V CHARACTERISTICS/, I.E.E.E. transactions on electron devices, 42(7), 1995, pp. 1255-1261