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Results: 1-12 |
Results: 12
BOND BREAKING OF ADATOMS ON SI SURFACES BY ELECTRONIC EXCITATION
Authors: KHOO GS ITOH N ONG CK
Citation: Gs. Khoo et al., BOND BREAKING OF ADATOMS ON SI SURFACES BY ELECTRONIC EXCITATION, Journal of physics. Condensed matter, 7(10), 1995, pp. 2051-2058
CHEMISORPTION OF CL ON THE SI(100)-2X1 SURFACE
Authors: KHOO GS ONG CK
Citation: Gs. Khoo et Ck. Ong, CHEMISORPTION OF CL ON THE SI(100)-2X1 SURFACE, Physical review. B, Condensed matter, 52(4), 1995, pp. 2574-2578
FORMATION OF BR-TERMINATED SI-6 RINGS DURING ETCHING OF SI(111)-7X7
Authors: PECHMAN RJ MORIWAKI T WEAVER JH KHOO GS
Citation: Rj. Pechman et al., FORMATION OF BR-TERMINATED SI-6 RINGS DURING ETCHING OF SI(111)-7X7, Surface science, 341(3), 1995, pp. 1085-1090
THE INTERACTIONS OF METALLIC AND SEMICONDUCTING ADSORBATES WITH SI(100)
Authors: KHOO GS ONG CK
Citation: Gs. Khoo et Ck. Ong, THE INTERACTIONS OF METALLIC AND SEMICONDUCTING ADSORBATES WITH SI(100), Journal of physics. Condensed matter, 6(40), 1994, pp. 8141-8148
THEORETICAL-STUDIES OF HALOGEN-SEMICONDUCTOR-SURFACE INTERACTIONS - THE CL GAAS(110) SYSTEM/
Authors: KHOO GS ONG CK
Citation: Gs. Khoo et Ck. Ong, THEORETICAL-STUDIES OF HALOGEN-SEMICONDUCTOR-SURFACE INTERACTIONS - THE CL GAAS(110) SYSTEM/, Physical review. B, Condensed matter, 50(15), 1994, pp. 10796-10800
THEORETICAL-STUDIES OF HALOGEN-SEMICONDUCTOR-SURFACE INTERACTIONS - THE CL GAAS(110) SYSTEM/
Authors: KHOO GS ONG CK
Citation: Gs. Khoo et Ck. Ong, THEORETICAL-STUDIES OF HALOGEN-SEMICONDUCTOR-SURFACE INTERACTIONS - THE CL GAAS(110) SYSTEM/, Physical review. B, Condensed matter, 50(15), 1994, pp. 10796-10800
ENERGIES FOR ATOMIC EMISSIONS FROM DEFECT SITES ON THE SI SURFACES - THE EFFECTS OF HALOGEN ADSORBATES
Authors: KHOO GS ONG CK ITOH N KANASAKI J
Citation: Gs. Khoo et al., ENERGIES FOR ATOMIC EMISSIONS FROM DEFECT SITES ON THE SI SURFACES - THE EFFECTS OF HALOGEN ADSORBATES, Journal of applied physics, 75(1), 1994, pp. 255-258
CHARACTERISTICS OF POTASSIUM DIFFUSION AND ADSORPTION ON PERFECT AND STEPPED GAAS(110) SURFACES
Authors: KHOO GS ONG CK
Citation: Gs. Khoo et Ck. Ong, CHARACTERISTICS OF POTASSIUM DIFFUSION AND ADSORPTION ON PERFECT AND STEPPED GAAS(110) SURFACES, Journal of physics. Condensed matter, 5(36), 1993, pp. 6507-6514
O-IN GAP - A NEGATIVE-U CENTER
Authors: KHOO GS ONG CK
Citation: Gs. Khoo et Ck. Ong, O-IN GAP - A NEGATIVE-U CENTER, Journal of physics. Condensed matter, 5(23), 1993, pp. 3917-3924
MODELED MICROSCOPIC STRUCTURES OF MONATOMIC AND DIATOMIC AL ON STEPPED AND UNSTEPPED GAP(110) SURFACES
Authors: KHOO GS ONG CK
Citation: Gs. Khoo et Ck. Ong, MODELED MICROSCOPIC STRUCTURES OF MONATOMIC AND DIATOMIC AL ON STEPPED AND UNSTEPPED GAP(110) SURFACES, Physical review. B, Condensed matter, 48(16), 1993, pp. 11936-11941
H-INDUCED PASSIVATION OF GAAS(110)-BE SURFACE-ACCEPTOR SYSTEMS
Authors: KHOO GS ONG CK
Citation: Gs. Khoo et Ck. Ong, H-INDUCED PASSIVATION OF GAAS(110)-BE SURFACE-ACCEPTOR SYSTEMS, Physical review. B, Condensed matter, 47(24), 1993, pp. 16369-16372
DEFECT PROCESSES IN GAP - IMPLICATIONS FOR THE BEHAVIOR OF EXCITED SURFACE-DEFECTS
Authors: KHOO GS ONG CK
Citation: Gs. Khoo et Ck. Ong, DEFECT PROCESSES IN GAP - IMPLICATIONS FOR THE BEHAVIOR OF EXCITED SURFACE-DEFECTS, Physical review. B, Condensed matter, 47(15), 1993, pp. 9346-9349
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