AAAAAA
Results:
1-7
|
Results: 7
Authors:
LEE WC
KING YC
KING TJ
HU CM
Citation: Wc. Lee et al., INVESTIGATION OF POLY-SI1-XGEX FOR DUAL-GATE CMOS TECHNOLOGY, IEEE electron device letters, 19(7), 1998, pp. 247-249
Authors:
KING YC
FUJIOKA H
KAMOHARA S
CHEN K
HU CM
Citation: Yc. King et al., DC ELECTRICAL OXIDE THICKNESS MODEL FOR QUANTIZATION OF THE INVERSIONLAYER IN MOSFETS, Semiconductor science and technology, 13(8), 1998, pp. 963-966
Authors:
KING YC
HU CM
FUJIOKA H
KAMOHARA S
Citation: Yc. King et al., SMALL-SIGNAL ELECTRON CHARGE CENTROID MODEL FOR QUANTIZATION OF INVERSION LAYER IN A METAL-ON-INSULATOR FIELD-EFFECT TRANSISTOR, Applied physics letters, 72(26), 1998, pp. 3476-3478
Authors:
KUO CJ
CHUANG CH
KING YC
Citation: Cj. Kuo et al., ROTATION-BASED PARALLAX IMAGE CAPTURE SYSTEM FOR STEREOGRAPHIC DISPLAY, International journal of optoelectronics, 11(6), 1997, pp. 439-442
Authors:
KING YC
CHUANG CH
KUO CJ
Citation: Yc. King et al., PARALLAX IMAGE CAPTURE SYSTEM FOR STEREOGRAPHIC DISPLAY, Optical engineering, 35(6), 1996, pp. 1560-1564
Authors:
KING YC
YU B
POHLMAN J
HU CM
Citation: Yc. King et al., PUNCHTHROUGH DIODE AS THE TRANSIENT VOLTAGE SUPPRESSOR FOR LOW-VOLTAGE ELECTRONICS, I.E.E.E. transactions on electron devices, 43(11), 1996, pp. 2037-2040
Authors:
KING YC
YU B
POHLMAN J
HU CM
Citation: Yc. King et al., PUNCHTHROUGH TRANSIENT VOLTAGE SUPPRESSOR FOR LOW-VOLTAGE ELECTRONICS, IEEE electron device letters, 16(7), 1995, pp. 303-305
Risultati:
1-7
|