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Results: 3
ON THE NATURE OF DEEP DONORS CREATED AT 450-DEGREES-C IN BORON-DOPED P-SI
Authors: BABICH VM BARAN NP VALAKH MY KIRITSA VL RUDKO GY
Citation: Vm. Babich et al., ON THE NATURE OF DEEP DONORS CREATED AT 450-DEGREES-C IN BORON-DOPED P-SI, Physica status solidi. a, Applied research, 157(2), 1996, pp. 405-410
LOW-TEMPERATURE DIFFUSION OF OXYGEN AND FORMATION OF THERMAL DONORS IN SILICON DOPED WITH AN ISOVALENT GERMANIUM IMPURITY
Authors: BABICH VM BARAN NP ZOTOV KI KIRITSA VL KOVALCHUK VB
Citation: Vm. Babich et al., LOW-TEMPERATURE DIFFUSION OF OXYGEN AND FORMATION OF THERMAL DONORS IN SILICON DOPED WITH AN ISOVALENT GERMANIUM IMPURITY, Semiconductors, 29(1), 1995, pp. 30-33
SCATTERING OF CURRENT CARRIERS IN ANNEALE D CZOCHRALSKY CRYSTALS OF SI
Authors: BABICH VM BARAN NP KIRITSA VL KOVALCHUK VB SKOROKHOD MY
Citation: Vm. Babich et al., SCATTERING OF CURRENT CARRIERS IN ANNEALE D CZOCHRALSKY CRYSTALS OF SI, UKRAINSKII FIZICHESKII ZHURNAL, 39(3-4), 1994, pp. 481-485
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