Authors: KENKARE PU MAZURE C HAYDEN JD PFIESTER JR KO J KIRSCH HC AJURIA SA CRABTREE P VUONG T

Citation: Pu. Kenkare et al., SCALING OF POLY-ENCAPSULATED LOCOS FOR 0.35 MU-M CMOS TECHNOLOGY (VOL41, PG 56, 1994), I.E.E.E. transactions on electron devices, 42(8), 1995, pp. 1564-1564

Authors: TAFT RC LAGE CS HAYDEN JD KIRSCH HC LIN JH DENNING DJ SHAPIRO FB BOCKELMAN DE CAMILLERI N

Citation: Rc. Taft et al., THE SCC BJT - A HIGH-PERFORMANCE BIPOLAR-TRANSISTOR COMPATIBLE WITH HIGH-DENSITY DEEP-SUBMICROMETER BICMOS SRAM TECHNOLOGIES, I.E.E.E. transactions on electron devices, 42(7), 1995, pp. 1277-1286

Authors: KENKARE PU MAZURE C HAYDEN JD PFIESTER JR KO J KIRSCH HC AJURIA SA CRABTREE P VUONG T

Citation: Pu. Kenkare et al., SCALING OF POLY-ENCAPSULATED LOCOS FOR 0.35 MU-M CMOS TECHNOLOGY, I.E.E.E. transactions on electron devices, 41(1), 1994, pp. 56-62

Authors: ROTH SS COOPER KJ RAY W KIRSCH HC GROVE C

Citation: Ss. Roth et al., OFFSET TRENCH ISOLATION, Journal of the Electrochemical Society, 141(8), 1994, pp. 2178-2181

Authors: ROTH SS COOPER KJ KIRSCH HC RAY W HENDRIX L SIMON G

Citation: Ss. Roth et al., PELOX INTEGRATED PBL, IEEE transactions on semiconductor manufacturing, 6(3), 1993, pp. 246-250