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Results: 1-11 |
Results: 11
ELASTIC STRAIN AND ENHANCED LIGHT-EMISSION IN DRY-ETCHED SI SI1-XGEX QUANTUM DOTS/
Authors: TANG YS TORRES CMS NILSSON S DIETRICH B KISSINGER W WHALL TE PARKER EHC NI WX HANSSON GV PRESTING H KIBBEL H
Citation: Ys. Tang et al., ELASTIC STRAIN AND ENHANCED LIGHT-EMISSION IN DRY-ETCHED SI SI1-XGEX QUANTUM DOTS/, Journal of electronic materials, 25(2), 1996, pp. 287-291
DEFECTS AND VISIBLE PHOTOLUMINESCENCE IN POROUS SI1-XGEX
Authors: SCHOISSWOHL M CANTIN JL CHAMARRO M VONBARDELEBEN HJ MORGENSTERN T BUGIEL E KISSINGER W ANDREU RC
Citation: M. Schoisswohl et al., DEFECTS AND VISIBLE PHOTOLUMINESCENCE IN POROUS SI1-XGEX, Thin solid films, 276(1-2), 1996, pp. 92-95
RESIDUAL STRAIN IN SI-SI1-XGEX QUANTUM DOTS
Authors: TANG YS TORRES CMS NILSSON S DIETRICH B KISSINGER W WHALL TE PARKER EHC PRESTING H KIBBEL H
Citation: Ys. Tang et al., RESIDUAL STRAIN IN SI-SI1-XGEX QUANTUM DOTS, Solid-state electronics, 40(1-8), 1996, pp. 383-386
CRITICAL-POINTS OF SI1-YCY AND SI1-X-YGEXCY LAYERS STRAINED PSEUDOMORPHICALLY ON SI(001)
Authors: KISSINGER W OSTEN HJ WEIDNER M EICHLER M
Citation: W. Kissinger et al., CRITICAL-POINTS OF SI1-YCY AND SI1-X-YGEXCY LAYERS STRAINED PSEUDOMORPHICALLY ON SI(001), Journal of applied physics, 79(6), 1996, pp. 3016-3020
STRUCTURE AND VISIBLE PHOTOLUMINESCENCE OF POROUS SI1-XGEX
Authors: SCHOISSWOHL M CANTIN JL CHAMARRO M VONBARDELEBEN HJ MORGENSTERN T BUGIEL E KISSINGER W ANDREU RC
Citation: M. Schoisswohl et al., STRUCTURE AND VISIBLE PHOTOLUMINESCENCE OF POROUS SI1-XGEX, Physical review. B, Condensed matter, 52(16), 1995, pp. 11898-11903
RAMAN-SPECTROSCOPY OF DRY-ETCHED SI-SI1-XGEX QUANTUM DOTS
Authors: TANG YS TORRES CMS DIETRICH B KISSINGER W WHALL TE PARKER EHC
Citation: Ys. Tang et al., RAMAN-SPECTROSCOPY OF DRY-ETCHED SI-SI1-XGEX QUANTUM DOTS, Solid state communications, 94(5), 1995, pp. 369-372
PHOTOLUMINESCENCE AND RAMAN-SPECTROSCOPY OF SI SI1-XGEX QUANTUM DOTS/
Authors: TANG YS TORRES CMS DIETRICH B KISSINGER W WHALL TE PARKER EHC
Citation: Ys. Tang et al., PHOTOLUMINESCENCE AND RAMAN-SPECTROSCOPY OF SI SI1-XGEX QUANTUM DOTS/, Journal of crystal growth, 157(1-4), 1995, pp. 280-284
DEPENDENCE OF THE INTERFACE SHARPNESS OF A GE SINGLE-QUANTUM-WELL ON MOLECULAR-BEAM-EPITAXIAL GROWTH-CONDITIONS
Authors: KISSINGER W OSTEN HJ LIPPERT G DIETRICH B BUGIEL E
Citation: W. Kissinger et al., DEPENDENCE OF THE INTERFACE SHARPNESS OF A GE SINGLE-QUANTUM-WELL ON MOLECULAR-BEAM-EPITAXIAL GROWTH-CONDITIONS, Journal of applied physics, 76(12), 1994, pp. 8042-8047
OPTICAL-TRANSITIONS IN STRAINED SI1-YCY LAYERS ON SI(001)
Authors: KISSINGER W WEIDNER M OSTEN HJ EICHLER M
Citation: W. Kissinger et al., OPTICAL-TRANSITIONS IN STRAINED SI1-YCY LAYERS ON SI(001), Applied physics letters, 65(26), 1994, pp. 3356-3358
IMPURITY-MEDIATED GROWTH AND CHARACTERIZATION OF THIN PSEUDOMORPHIC GERMANIUM LAYERS IN SILICON
Authors: OSTEN HJ BUGIEL E DIETRICH B KISSINGER W
Citation: Hj. Osten et al., IMPURITY-MEDIATED GROWTH AND CHARACTERIZATION OF THIN PSEUDOMORPHIC GERMANIUM LAYERS IN SILICON, Applied physics letters, 64(13), 1994, pp. 1723-1725
VOID-FREE SILICON-WAFER-BOND STRENGTHENING IN THE 200-400 DEGREES-C RANGE
Authors: KISSINGER G KISSINGER W
Citation: G. Kissinger et W. Kissinger, VOID-FREE SILICON-WAFER-BOND STRENGTHENING IN THE 200-400 DEGREES-C RANGE, Sensors and actuators. A, Physical, 36(2), 1993, pp. 149-156
Risultati: 1-11 |