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Results: 1-8 |
Results: 8
CALIBRATION OF POLYCRYSTALLINE SILICON DEPOSITION AND ETCHING MACHINEINSIDE A TECHNOLOGICAL SIMULATOR
Authors: GAILLARD T LHERMITE H BONNAUD O KISSION K
Citation: T. Gaillard et al., CALIBRATION OF POLYCRYSTALLINE SILICON DEPOSITION AND ETCHING MACHINEINSIDE A TECHNOLOGICAL SIMULATOR, Computational materials science, 11(2), 1998, pp. 109-112
FROM AMORPHOUS TO POLYCRYSTALLINE THIN-FILMS - DEPENDENCE ON ANNEALING TIME OF STRUCTURAL AND ELECTRONIC-PROPERTIES
Authors: MOHAMMEDBRAHIM T KISSION K BRIAND D SARRET M BONNAUD O KLEIDER JP LONGEAUD C LAMBERT B
Citation: T. Mohammedbrahim et al., FROM AMORPHOUS TO POLYCRYSTALLINE THIN-FILMS - DEPENDENCE ON ANNEALING TIME OF STRUCTURAL AND ELECTRONIC-PROPERTIES, Journal of non-crystalline solids, 230, 1998, pp. 962-966
EFFECT OF THE STARTING AMORPHOUS STRUCTURE ON THE SOLID-PHASE CRYSTALLIZATION OF SILICON
Authors: MOHAMMEDBRAHIM T SARRET M BRIAND D KISSION K HAJI L BONNAUD O LOUER D HADJAJ A
Citation: T. Mohammedbrahim et al., EFFECT OF THE STARTING AMORPHOUS STRUCTURE ON THE SOLID-PHASE CRYSTALLIZATION OF SILICON, Philosophical magazine. B. Physics of condensed matter. Statistical mechanics, electronic, optical and magnetic, 76(2), 1997, pp. 193-212
POLYSILICON CANTILEVER BEAM USING SURFACE MICROMACHINING TECHNOLOGY FOR APPLICATION IN MICROSWITCHES
Authors: LUCAS S KISSION K PINEL J BONNAUD O
Citation: S. Lucas et al., POLYSILICON CANTILEVER BEAM USING SURFACE MICROMACHINING TECHNOLOGY FOR APPLICATION IN MICROSWITCHES, Journal of micromechanics and microengineering, 7(3), 1997, pp. 159-161
SINGLE-SHOT EXCIMER-LASER CRYSTALLIZATION OF SILICON FILMS DEPOSITED BY LPCVD
Authors: KISSION K MOHAMMEDBRAHIM T BRIAND D SARRET M LEBIHAN F FORTIN B BONNAUD O BOHER P STEHLE M STEHLE JL
Citation: K. Kission et al., SINGLE-SHOT EXCIMER-LASER CRYSTALLIZATION OF SILICON FILMS DEPOSITED BY LPCVD, Thin solid films, 296(1-2), 1997, pp. 53-56
LOW-TEMPERATURE (LESS-THAN-OR-EQUAL-TO-600 DEGREES-C) UNHYDROGENATED IN-SITU DOPED POLYSILICON THIN-FILM TRANSISTORS - TOWARDS A TECHNOLOGYFOR FLAT-PANEL DISPLAYS
Authors: PICHON L RAOULT F MOURGUES K KISSION K MOHAMMEDBRAHIM T BONNAUD O
Citation: L. Pichon et al., LOW-TEMPERATURE (LESS-THAN-OR-EQUAL-TO-600 DEGREES-C) UNHYDROGENATED IN-SITU DOPED POLYSILICON THIN-FILM TRANSISTORS - TOWARDS A TECHNOLOGYFOR FLAT-PANEL DISPLAYS, Thin solid films, 296(1-2), 1997, pp. 133-136
INFLUENCE OF THE DOPING GAS ON THE AXIAL UNIFORMITY OF THE GROWTH-RATE AND THE ELECTRICAL-PROPERTIES OF LPCVD IN-SITU DOPED POLYSILICON LAYERS
Authors: BRIAND D SARRET M DUVERNEUIL P MOHAMMEDBRAHIM T KISSION K
Citation: D. Briand et al., INFLUENCE OF THE DOPING GAS ON THE AXIAL UNIFORMITY OF THE GROWTH-RATE AND THE ELECTRICAL-PROPERTIES OF LPCVD IN-SITU DOPED POLYSILICON LAYERS, Journal de physique. IV, 5(C5), 1995, pp. 887-893
POLYCRYSTALLINE SILICON CHARACTERISTICS DEPENDENCE ON STARTING AMORPHOUS MATERIAL
Authors: MOHAMMEDBRAHIM T SARRET M BRIAND D KISSION K BONNAUD O HADJAJ A
Citation: T. Mohammedbrahim et al., POLYCRYSTALLINE SILICON CHARACTERISTICS DEPENDENCE ON STARTING AMORPHOUS MATERIAL, Journal de physique. IV, 5(C5), 1995, pp. 913-920
Risultati: 1-8 |