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Citation: J. Stormer et al., A SLOW POSITRON LIFETIME STUDY OF THE ANNEALING BEHAVIOR OF AN AMORPHOUS-SILICON LAYER GROWN BY MBE, Applied physics A: Materials science & processing, 61(1), 1995, pp. 71-74

Authors: FELDMANN B ROPPISCHER H KIUNKE W EISELE J

Citation: B. Feldmann et al., CHARACTERIZATION OF DELTA-DOPED SILICON BY ELECTROLYTE ELECTROREFLECTANCE, Physica status solidi. a, Applied research, 152(1), 1995, pp. 171-177

Authors: HANSCH W HAMMERL E KIUNKE W EISELE I RAMM J BECK E

Citation: W. Hansch et al., SILICON MOLECULAR-BEAM EPITAXY ON HYDROGEN-PLASMA-CLEANED SUBSTRATES, JPN J A P 1, 33(4B), 1994, pp. 2263-2267

Authors: LINDOLF J KLEHN B KUNZE U KIUNKE W EISELE I

Citation: J. Lindolf et al., SCHOTTKY-BARRIER TUNNELING SPECTROSCOPY OF A 2-D ELECTRON-SYSTEM IN DELTA-DOPED SI(100) LAYERS, Solid-state electronics, 37(4-6), 1994, pp. 969-972

Authors: SCHULZE D GOBSCH G EISELE I KIUNKE W

Citation: D. Schulze et al., MODELING OF THE STATIC PROPERTIES FOR DOUBLE-DELTA TRANSISTORS, Journal of applied physics, 75(5), 1994, pp. 2502-2506

Authors: KIUNKE W HAMMERL E EISELE I

Citation: W. Kiunke et al., MBE-GROWN VERTICAL SILICON MOSFETS WITH SUB-0.3 MU-M CHANNEL LENGTHS, Journal of crystal growth, 127(1-4), 1993, pp. 73-75