AAAAAA
Results:
1-13
|
Results: 13
Authors:
LOURDUDOSS S
KJEBON O
Citation: S. Lourdudoss et O. Kjebon, HYDRIDE VAPOR-PHASE EPITAXY REVISITED, IEEE journal of selected topics in quantum electronics, 3(3), 1997, pp. 749-767
Authors:
LINDGREN S
AHLFELDT H
BACKLIN L
FORSSEN L
VIEIDER C
ELDERSTIG H
SVENSSON M
GRANLUND L
ANDERSSON L
KERZAR B
BROBERG B
KJEBON O
SCHATZ R
FORZELIUS E
NILSSON S
Citation: S. Lindgren et al., 24-GHZ MODULATION BANDWIDTH AND PASSIVE ALIGNMENT OF FLIP-CHIP MOUNTED DFB LASER-DIODES, IEEE photonics technology letters, 9(3), 1997, pp. 306-308
Authors:
LOURDUDOSS S
OVTCHINNIKOV A
KJEBON O
NILSSON S
BACKBOM L
KLINGA T
HOLZ R
Citation: S. Lourdudoss et al., ENTIRELY ALUMINUM FREE 905-MN WAVELENGTH BURIED HETEROSTRUCTURE LASERBY REACTIVE ION ETCHING AND SEMIINSULATING GAINP-FE REGROWTH, I.E.E.E. transactions on electron devices, 44(2), 1997, pp. 339-340
Authors:
KJEBON O
SCHATZ R
LOURDUDOSS S
NILSSON S
STALNACKE B
BACKBOM L
Citation: O. Kjebon et al., 30GHZ DIRECT MODULATION BANDWIDTH IN DETUNED LOADED INGAASP DBR LASERS AT 1.55 MU-M WAVELENGTH, Electronics Letters, 33(6), 1997, pp. 488-489
Authors:
LOURDUDOSS S
MESSMER ER
KJEBON O
LANDGREN G
Citation: S. Lourdudoss et al., TEMPORALLY RESOLVED SELECTIVE REGROWTH OF INP AROUND [110] AND [110] MESAS, Journal of electronic materials, 25(3), 1996, pp. 389-394
Authors:
LOURDUDOSS S
HOLZ R
KJEBON O
LANDGREN G
Citation: S. Lourdudoss et al., IRON-DOPED GAINP FOR SELECTIVE REGROWTH AROUND GAAS MESAS, Journal of crystal growth, 154(3-4), 1995, pp. 410-414
Authors:
LOURDUDOSS S
MESSMER ER
KJEBON O
LANDGREN G
Citation: S. Lourdudoss et al., TEMPORALLY RESOLVED REGROWTH OF INP, Journal of crystal growth, 152(3), 1995, pp. 105-114
Authors:
EVALDSSON P
ERIKSSON U
STALNACKE B
LOURDUDOS S
WALLIN J
KJEBON O
WILLEN B
Citation: P. Evaldsson et al., LOW-THRESHOLD (1.7MA) AND HIGH-BANDWIDTH (14GHZ) 1.55-MU-M P-SUBSTRATE LASERS USING SEMIINSULATING HVPE REGROWTH, Electronics Letters, 31(23), 1995, pp. 2012-2014
Authors:
OBERG M
KJEBON O
LOURDUDOSS S
NILSSON S
BACKBOM L
STREUBEL K
WALLIN J
Citation: M. Oberg et al., INCREASED MODULATION BANDWIDTH UP TO 20 GHZ OF A DETUNED-LOADED DBR LASER, IEEE photonics technology letters, 6(2), 1994, pp. 161-163
Authors:
LOURDUDOSS S
MESSMER ER
KJEBON O
STREUBEL K
ANDRE J
LANDGREN G
Citation: S. Lourdudoss et al., MORPHOLOGICAL MODIFICATIONS DURING SELECTIVE GROWTH OF INP AROUND CYLINDRICAL AND PARALLELEPIPED MESAS, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 179-182
Authors:
LOURDUDOSS S
DU S
KJEBON O
Citation: S. Lourdudoss et al., OPTIMIZATION OF INTERACTION PARAMETERS FOR GAXIN1-XASYP1-Y SOLID-SOLUTIONS USING GAS-SOLID EQUILIBRIUM DATA AND A SUBLATTICE MODEL, Calphad, 18(4), 1994, pp. 397-407
Authors:
STREUBEL K
WALLIN J
LANDGREN G
OHLANDER U
LOURDUDOSS S
KJEBON O
Citation: K. Streubel et al., IMPORTANCE OF METALORGANIC VAPOR-PHASE EPITAXY GROWTH-CONDITIONS FOR THE FABRICATION OF GAINASP STRAINED-QUANTUM-WELL LASERS, Journal of crystal growth, 143(1-2), 1994, pp. 7-14
Authors:
LOURDUDOSS S
KJEBON O
WALLIN J
LINDGREN S
Citation: S. Lourdudoss et al., HIGH-FREQUENCY GAINASP INP LASER MESAS IN (-110) DIRECTION WITH THICKSEMIINSULATING INP-FE/, IEEE photonics technology letters, 5(10), 1993, pp. 1119-1122
Risultati:
1-13
|