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Results: 1-7 |
Results: 7
MODIFICATION OF POROUS ALUMINA MEMBRANES USING AL2O3 ATOMIC LAYER CONTROLLED DEPOSITION
Authors: OTT AW KLAUS JW JOHNSON JM GEORGE SM MCCARLEY KC WAY JD
Citation: Aw. Ott et al., MODIFICATION OF POROUS ALUMINA MEMBRANES USING AL2O3 ATOMIC LAYER CONTROLLED DEPOSITION, Chemistry of materials, 9(3), 1997, pp. 707-714
SURFACE-CHEMISTRY OF IN2O3 DEPOSITION USING IN(CH3)(3) AND H2O IN A BINARY REACTION SEQUENCE
Authors: OTT AW JOHNSON JM KLAUS JW GEORGE SM
Citation: Aw. Ott et al., SURFACE-CHEMISTRY OF IN2O3 DEPOSITION USING IN(CH3)(3) AND H2O IN A BINARY REACTION SEQUENCE, Applied surface science, 112, 1997, pp. 205-215
AL3O3 THIN-FILM GROWTH ON SI(100) USING BINARY REACTION SEQUENCE CHEMISTRY
Authors: OTT AW KLAUS JW JOHNSON JM GEORGE SM
Citation: Aw. Ott et al., AL3O3 THIN-FILM GROWTH ON SI(100) USING BINARY REACTION SEQUENCE CHEMISTRY, Thin solid films, 292(1-2), 1997, pp. 135-144
GROWTH OF SIO2 AT ROOM-TEMPERATURE WITH THE USE OF CATALYZED SEQUENTIAL HALF-REACTIONS
Authors: KLAUS JW SNEH O GEORGE SM
Citation: Jw. Klaus et al., GROWTH OF SIO2 AT ROOM-TEMPERATURE WITH THE USE OF CATALYZED SEQUENTIAL HALF-REACTIONS, Science, 278(5345), 1997, pp. 1934-1936
ATOMIC LAYER CONTROLLED GROWTH OF SIO2-FILMS USING BINARY REACTION SEQUENCE CHEMISTRY
Authors: KLAUS JW OTT AW JOHNSON JM GEORGE SM
Citation: Jw. Klaus et al., ATOMIC LAYER CONTROLLED GROWTH OF SIO2-FILMS USING BINARY REACTION SEQUENCE CHEMISTRY, Applied physics letters, 70(9), 1997, pp. 1092-1094
ATOMIC LAYER CONTROLLED DEPOSITION OF AL2O3 FILMS USING BINARY REACTION SEQUENCE CHEMISTRY
Authors: OTT AW MCCARLEY KC KLAUS JW WAY JD GEORGE SM
Citation: Aw. Ott et al., ATOMIC LAYER CONTROLLED DEPOSITION OF AL2O3 FILMS USING BINARY REACTION SEQUENCE CHEMISTRY, Applied surface science, 107, 1996, pp. 128-136
SURFACE-CHEMISTRY FOR ATOMIC LAYER GROWTH
Authors: GEORGE SM OTT AW KLAUS JW
Citation: Sm. George et al., SURFACE-CHEMISTRY FOR ATOMIC LAYER GROWTH, Journal of physical chemistry, 100(31), 1996, pp. 13121-13131
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