AAAAAA
Results:
1-8
|
Results: 8
Authors:
KUIJLAARS KJ
KLEIJN CR
VANDENAKKER HEA
Citation: Kj. Kuijlaars et al., SIMULATION OF SELECTIVE TUNGSTEN CHEMICAL-VAPOR-DEPOSITION, Solid-state electronics, 42(5), 1998, pp. 43-54
Authors:
OKKERSE M
DECROON MHJM
KLEIJN CR
VANDENAKKER HEA
MARIN GB
Citation: M. Okkerse et al., A SURFACE AND A GAS-PHASE MECHANISM FOR THE DESCRIPTION OF GROWTH ON THE DIAMOND(100) SURFACE IN AN OXY-ACETYLENE TORCH REACTOR, Journal of applied physics, 84(11), 1998, pp. 6387-6398
Authors:
KUIJLAARS KJ
KLEIJN CR
VANDENAKKER HEA
Citation: Kj. Kuijlaars et al., MODELING OF SELECTIVE TUNGSTEN LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION, Thin solid films, 291, 1996, pp. 406-410
Authors:
KLEIJN CR
KUIJLAARS KJ
VANDENAKKER HEA
Citation: Cr. Kleijn et al., DESIGN AND SCALE-UP OF CHEMICAL-VAPOR-DEPOSITION REACTORS FOR SEMICONDUCTOR PROCESSING, Chemical Engineering Science, 51(10), 1996, pp. 2119-2128
Authors:
KUIJLAARS KJ
KLEIJN CR
VANDENAKKER HEA
Citation: Kj. Kuijlaars et al., MULTICOMPONENT DIFFUSION PHENOMENA IN MULTIPLE-WAFER CHEMICAL-VAPOR-DEPOSITION REACTORS, Chemical engineering journal and the biochemical engineering journal, 57(2), 1995, pp. 127-136
Authors:
KUIJLAARS KJ
KLEIJN CR
VANDENAKKER HEA
Citation: Kj. Kuijlaars et al., A DETAILED MODEL FOR LOW-PRESSURE CVD OF TUNGSTEN, Thin solid films, 270(1-2), 1995, pp. 456-461
Authors:
OOSTERLAKEN TGM
LEUSINK GJ
JANSSEN GCAM
RADELAAR S
KUIJLAARS KJ
KLEIJN CR
VANDENAKKER HEA
Citation: Tgm. Oosterlaken et al., INFLUENCE OF TEMPERATURE-GRADIENTS ON PARTIAL PRESSURES IN A LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION REACTOR, Journal of applied physics, 76(5), 1994, pp. 3130-3139
Authors:
EINSET EO
JENSEN KF
KLEIJN CR
Citation: Eo. Einset et al., ON THE ORIGIN OF RETURN FLOWS IN HORIZONTAL CHEMICAL-VAPOR-DEPOSITIONREACTORS, Journal of crystal growth, 132(3-4), 1993, pp. 483-490
Risultati:
1-8
|