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Results: 1-8 |
Results: 8
GATE CURRENT AND OXIDE RELIABILITY IN P(-SI AND POLY-GE0.3SI0.7 GATE MATERIAL() POLY MOS CAPACITORS WITH POLY)
Authors: SALM C KLOOTWIJK JH PONOMAREV Y BOOS PWH GRAVESTEIJN DJ WOERLEE PH
Citation: C. Salm et al., GATE CURRENT AND OXIDE RELIABILITY IN P(-SI AND POLY-GE0.3SI0.7 GATE MATERIAL() POLY MOS CAPACITORS WITH POLY), IEEE electron device letters, 19(7), 1998, pp. 213-215
RTP ANNEALINGS FOR HIGH-QUALITY LPCVD INTERPOLYSILICON DIELECTRIC LAYERS
Authors: KLOOTWIJK JH VANKRANENBURG H WEUSTHOF MHH WOERLEE PH WALLINGA H
Citation: Jh. Klootwijk et al., RTP ANNEALINGS FOR HIGH-QUALITY LPCVD INTERPOLYSILICON DIELECTRIC LAYERS, Microelectronics and reliability, 38(2), 1998, pp. 277-280
IMPROVEMENTS OF DEPOSITED INTERPOLYSILICON DIELECTRIC CHARACTERISTICSWITH RTP N2O-ANNEAL
Authors: KLOOTWIJK JH WEUSTHOF MHH VANKRANENBURG H WOERLEE PH WALLINGA H
Citation: Jh. Klootwijk et al., IMPROVEMENTS OF DEPOSITED INTERPOLYSILICON DIELECTRIC CHARACTERISTICSWITH RTP N2O-ANNEAL, IEEE electron device letters, 17(7), 1996, pp. 358-359
DIELECTRIC-BREAKDOWN .1. A REVIEW OF OXIDE BREAKDOWN
Authors: VERWEIJ JF KLOOTWIJK JH
Citation: Jf. Verweij et Jh. Klootwijk, DIELECTRIC-BREAKDOWN .1. A REVIEW OF OXIDE BREAKDOWN, Microelectronics, 27(7), 1996, pp. 611-622
DIELECTRIC-BREAKDOWN .2. RELATED PROJECTS AT THE UNIVERSITY-OF-TWENTE
Authors: KLOOTWIJK JH VERWEIJ JF REM JB BIJLSMA S
Citation: Jh. Klootwijk et al., DIELECTRIC-BREAKDOWN .2. RELATED PROJECTS AT THE UNIVERSITY-OF-TWENTE, Microelectronics, 27(7), 1996, pp. 623-632
LPCVD SIO2 LAYERS PREPARED FROM SIH4 AND O-2 AT 450-DEGREES-C IN A RAPID THERMAL-PROCESSING REACTOR
Authors: COBIANU C REM JB KLOOTWIJK JH WEUSTHOF MHH HOLLEMAN J WOERLEE PH
Citation: C. Cobianu et al., LPCVD SIO2 LAYERS PREPARED FROM SIH4 AND O-2 AT 450-DEGREES-C IN A RAPID THERMAL-PROCESSING REACTOR, Journal de physique. IV, 5(C5), 1995, pp. 1005-1011
ON THE DEPOSITION KINETICS OF THE LPCVD GATE OXIDES PREPARED FROM SIH4 AND O-2
Authors: REM JB KLOOTWIJK JH COBIANU C HOLLEMAN J VERWEIJ JF
Citation: Jb. Rem et al., ON THE DEPOSITION KINETICS OF THE LPCVD GATE OXIDES PREPARED FROM SIH4 AND O-2, Journal de physique. IV, 5(C5), 1995, pp. 113-118
ON THE DEPOSITION KINETICS OF THE LPCVD GATE OXIDES PREPARED FROM SIH4 AND O-2
Authors: REM JB KLOOTWIJK JH COBIANU C HOLLEMAN J VERWEIJ JF
Citation: Jb. Rem et al., ON THE DEPOSITION KINETICS OF THE LPCVD GATE OXIDES PREPARED FROM SIH4 AND O-2, Journal de physique. IV, 5(C5), 1995, pp. 113-118
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