Authors:
RAZ T
EDELMAN F
KOMEM Y
STOLZER M
ZAUMSEIL P
Citation: T. Raz et al., TRANSPORT-PROPERTIES OF BORON-DOPED CRYSTALLIZED AMORPHOUS SI1-XGEX FILMS, Journal of applied physics, 84(8), 1998, pp. 4343-4350
Citation: S. Tamir et al., PROCESS OPTIMIZATION AND RELATED MATERIAL PROPERTIES OF SILICON FILMSPRODUCED BY LASER-INDUCED CHEMICAL-VAPOR-DEPOSITION FROM SILANE, Journal of Materials Science, 31(4), 1996, pp. 1013-1019
Authors:
EDELMAN F
KOMEM Y
WERNER P
HEYDENREICH J
IYER SS
Citation: F. Edelman et al., DECOMPOSITION AND MODULATED STRUCTURE FORMATION DURING AMORPHOUS SI1-XGEX CRYSTALLIZATION, Thin solid films, 266(2), 1995, pp. 212-214
Citation: S. Tamir et al., GROWTH MECHANISMS OF SILICON FILMS PRODUCED BY LASER-INDUCED CHEMICAL-VAPOR-DEPOSITION, Thin solid films, 261(1-2), 1995, pp. 251-255
Citation: B. Sander et al., THE DYNAMICS OF ROCKING CURVES IN STRAINED (001) SI CRYSTALS UNDERGOING ULTRASONIC EXCITATION, Journal of physics. D, Applied physics, 28(4A), 1995, pp. 287-290
Authors:
EDELMAN F
KOMEM Y
WERNER P
HEYDENREICH J
BUTZ R
IYER SS
Citation: F. Edelman et al., CRYSTALLIZATION OF A-SI1-XGEX - DECOMPOSITION AND MODULATED STRUCTUREFORMATION FEATURES, Journal of crystal growth, 157(1-4), 1995, pp. 177-180
Citation: E. Zolotoyabko et al., THE ULTRASOUND-INDUCED NARROWING EFFECT OF ROCKING CURVES IN STRAINEDSILICON-CRYSTALS, Acta crystallographica. Section A, Foundations of crystallography, 50, 1994, pp. 253-257
Citation: E. Zolotoyabko et al., IMPROVED STRAIN ANALYSIS IN SEMICONDUCTOR CRYSTALS BY X-RAY-DIFFRACTOMETRY ENHANCED WITH ULTRASOUND, Applied physics letters, 63(11), 1993, pp. 1540-1542