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Results: 1-9 |
Results: 9
WARP REDUCTION OF HIGH-ELECTRON-MOBILITY-TRANSISTOR ON SI WAFER BY IN-DOPED SELECTIVELY DOPED HETEROSTRUCTURE AND STRAINED-LAYER SUPERLATTICE BUFFER LAYER
Authors: OHORI T SUEHIRO H KASAI K KOMENO J
Citation: T. Ohori et al., WARP REDUCTION OF HIGH-ELECTRON-MOBILITY-TRANSISTOR ON SI WAFER BY IN-DOPED SELECTIVELY DOPED HETEROSTRUCTURE AND STRAINED-LAYER SUPERLATTICE BUFFER LAYER, JPN J A P 1, 33(8), 1994, pp. 4499-4505
METALORGANIC VAPOR-PHASE EPITAXY USING ORGANIC GROUP-V PRECURSORS
Authors: KOMENO J
Citation: J. Komeno, METALORGANIC VAPOR-PHASE EPITAXY USING ORGANIC GROUP-V PRECURSORS, Journal of crystal growth, 145(1-4), 1994, pp. 468-472
EFFECT OF STRAINED INGAAS STEP BUNCHING ON MOBILITY AND DEVICE PERFORMANCE IN N-INGAP INGAAS/GAAS PSEUDOMORPHIC HETEROSTRUCTURES GROWN BY METALORGANIC VAPOR-PHASE EPITAXY/
Authors: KIKKAWA T MAKIYAMA K OCHIMIZU H KASAI K KOMENO J
Citation: T. Kikkawa et al., EFFECT OF STRAINED INGAAS STEP BUNCHING ON MOBILITY AND DEVICE PERFORMANCE IN N-INGAP INGAAS/GAAS PSEUDOMORPHIC HETEROSTRUCTURES GROWN BY METALORGANIC VAPOR-PHASE EPITAXY/, Journal of crystal growth, 145(1-4), 1994, pp. 799-807
NOVEL PSEUDOMORPHIC STRUCTURE ON SI SUBSTRATE GROWN BY METALORGANIC VAPOR-PHASE EPITAXY
Authors: OHORI T ESHITA T MIYAGAKI S KASAI K KOMENO J
Citation: T. Ohori et al., NOVEL PSEUDOMORPHIC STRUCTURE ON SI SUBSTRATE GROWN BY METALORGANIC VAPOR-PHASE EPITAXY, Journal of crystal growth, 145(1-4), 1994, pp. 924-928
CHEMICAL BEAM EPITAXY SELECTIVELY-REGROWN N-GAAS LAYER ON METALORGANIC CHEMICAL-VAPOR-DEPOSITION GROWN GAINP()GAINAS/GAAS PSEUDOMORPHIC HIGH-ELECTRON-MOBILITY TRANSISTOR STRUCTURE/
Authors: BOVE P ONO K JOSHIN K TANAKA H KASAI K KOMENO J
Citation: P. Bove et al., CHEMICAL BEAM EPITAXY SELECTIVELY-REGROWN N-GAAS LAYER ON METALORGANIC CHEMICAL-VAPOR-DEPOSITION GROWN GAINP()GAINAS/GAAS PSEUDOMORPHIC HIGH-ELECTRON-MOBILITY TRANSISTOR STRUCTURE/, Journal of crystal growth, 136(1-4), 1994, pp. 261-267
EFFECT OF THREADING DISLOCATIONS ON MOBILITY IN SELECTIVELY DOPED HETEROSTRUCTURES GROWN ON SI SUBSTRATES
Authors: OHORI T OHKUBO S KASAI K KOMENO J
Citation: T. Ohori et al., EFFECT OF THREADING DISLOCATIONS ON MOBILITY IN SELECTIVELY DOPED HETEROSTRUCTURES GROWN ON SI SUBSTRATES, Journal of applied physics, 75(7), 1994, pp. 3681-3683
LATERAL DIFFUSION OF SOURCES DURING SELECTIVE GROWTH OF SI-DOPED GAAS-LAYERS BY METALORGANIC VAPOR-PHASE EPITAXY
Authors: HARA N SHIINA K OHORI T KASAI K KOMENO J
Citation: N. Hara et al., LATERAL DIFFUSION OF SOURCES DURING SELECTIVE GROWTH OF SI-DOPED GAAS-LAYERS BY METALORGANIC VAPOR-PHASE EPITAXY, Journal of applied physics, 74(2), 1993, pp. 1327-1331
LARGE-AREA AND HIGHLY UNIFORM MOVPE GROWTH FOR ALGAAS GAAS HEMT LSIS/
Authors: TOMESAKAI N SUZUKI M KOMENO J
Citation: N. Tomesakai et al., LARGE-AREA AND HIGHLY UNIFORM MOVPE GROWTH FOR ALGAAS GAAS HEMT LSIS/, Journal of the Electrochemical Society, 140(8), 1993, pp. 2432-2438
HOT-ELECTRON SCATTERING MECHANISMS IN ALGAAS GAAS/ALGAAS QUANTUM-WELLS/
Authors: MAKIYAMA K KASAI K OHORI T KOMENO J
Citation: K. Makiyama et al., HOT-ELECTRON SCATTERING MECHANISMS IN ALGAAS GAAS/ALGAAS QUANTUM-WELLS/, Semiconductor science and technology, 7(3B), 1992, pp. 248-250
Risultati: 1-9 |