Authors: VODOPYANOV VN VOLKOV VL KONDRATENKO MM LITVINOV VI

Citation: Vn. Vodopyanov et al., IMPURITY ENERGY-STATES IN CADMIUM-DOPED PB0.8SN0.2TE EPITAXIAL LAYERS, Semiconductors, 30(8), 1996, pp. 716-719

Authors: VODOPYANOV VN KONDRATENKO MM SLYNKO EI

Citation: Vn. Vodopyanov et al., COMPOSITION OF LEAD-GERMANIUM-TIN-TELLURIUM EPITAXIAL LAYERS GROWN INA QUASI-CLOSED REACTOR, Inorganic materials, 32(9), 1996, pp. 960-962

Authors: VODOPYANOV VN KONDRATENKO MM SLYNKO EI

Citation: Vn. Vodopyanov et al., COMBINED DOPING OF PB1-XSNXTE EPITAXIAL LAYERS, Inorganic materials, 32(8), 1996, pp. 840-842

Authors: VODOPYANOV VN KONDRATENKO MM

Citation: Vn. Vodopyanov et Mm. Kondratenko, HIGH-TEMPERATURE PHOTOCONDUCTIVITY OF IND IUM-ALLOYED EPITAXIAL LAYERS OF PB(1-X)SNXTE(1-X)SEY SOLID-SOLUTION, Pis'ma v Zurnal tehniceskoj fiziki, 20(23), 1994, pp. 73-75