Authors: KWOK CY WILLIAMS A GROSS M GAUJA E KONG SO

Citation: Cy. Kwok et al., EFFECTS OF CONTROLLED TEXTURIZATION OF THE CRYSTALLINE SI SURFACE ON THE SIO2 SI EFFECTIVE BARRIER HEIGHT/, IEEE electron device letters, 15(12), 1994, pp. 513-515

Authors: KONG SO KWOK CY

Citation: So. Kong et Cy. Kwok, SIMULATION OF THE PROGRAM OPERATIONS OF THE FLOTOX EEPROM, Solid-state electronics, 37(12), 1994, pp. 1949-1960

Authors: KONG SO KWOK CY

Citation: So. Kong et Cy. Kwok, FOWLER-NORDHEIM TUNNELING CURRENT IN AN MG SIO2/SI MOS STRUCTURE/, Solid-state electronics, 37(1), 1994, pp. 45-49

Authors: KONG SO KWOK CY

Citation: So. Kong et Cy. Kwok, FOWLER-NORDHEIM TUNNELING CURRENT IN A YTTRIUM SILICON DIOXIDE SILICON MOS STRUCTURE, Solid-state electronics, 37(1), 1994, pp. 189-191

Authors: KONG SO KWOK CY

Citation: So. Kong et Cy. Kwok, FOWLER-NORDHEIM TUNNELING CURRENT IN A MG POLYCRYSTALLINE SI OXIDE/N+POLYCRYSTALLINE SI METAL-OXIDE-SILICON STRUCTURE/, Applied physics letters, 63(19), 1993, pp. 2667-2669