Authors:
VONAMMON W
DREIER P
HENSEL W
LAMBERT U
KOSTER L
Citation: W. Vonammon et al., INFLUENCE OF OXYGEN AND NITROGEN ON POINT-DEFECT AGGREGATION IN SILICON SINGLE-CRYSTALS, Materials science & engineering. B, Solid-state materials for advanced technology, 36(1-3), 1996, pp. 33-41
Citation: L. Fabry et al., DIAGNOSTIC AND MONITORING TOOLS OF LARGE-SCALE SI-MANUFACTURING - TRACE-ANALYTICAL TOOLS AND TECHNIQUES IN SI-WAFER MANUFACTURING, IEEE transactions on semiconductor manufacturing, 9(3), 1996, pp. 428-436