Authors:
KIM ED
KIM SC
PARK JM
GREKHOV IV
ARGUNOVA TS
KOSTINA LS
KUDRYAVTZEVA TV
Citation: Ed. Kim et al., STRUCTURAL QUALITY OF DIRECTLY BONDED SILICON-WAFERS WITH REGULARLY GROOVED INTERFACES, Journal of the Electrochemical Society, 144(2), 1997, pp. 622-627
Authors:
ARGUNOVA TS
GREKHOV IV
GUTKIN MY
KOSTINA LS
BELYAKOVA EN
KUDRYAVTSEVA TV
KIM ED
PARK DM
Citation: Ts. Argunova et al., DISLOCATIONS IN SILICON STRUCTURES OBTAIN ED THROUGH THE DIRECT SURFACE JOINING WITH RELIEF, Fizika tverdogo tela, 38(11), 1996, pp. 3361-3364
Authors:
PREOBRASHENSKII MN
REPIN VN
KOZLOV VA
KOSTINA LS
Citation: Mn. Preobrashenskii et al., RECEPTION OF ACOUSTIC IMAGES OF SEMICONDU CTING STRUCTURE INTERNAL LAYERS AT HIGH-FREQUENCIES, Pis'ma v Zurnal tehniceskoj fiziki, 22(9), 1996, pp. 45-50
Authors:
ARGUNOVA TS
ANDREEV AG
BELYAKOVA EI
GREKHOV IV
KOSTINA LS
KUDRYAVTSEVA TV
Citation: Ts. Argunova et al., DIRECT JOINING OF SILICON PLATES WITH REG ULAR RELIEF ON INTERFACES, Pis'ma v Zurnal tehniceskoj fiziki, 22(4), 1996, pp. 1-6
Authors:
GREKHOV IV
BERMAN LS
ARGUNOVA TS
KOSTINA LS
BELYAKOVA EI
KUDRYAVTSEVA TV
KIM ED
KIM SC
PAK DM
Citation: Iv. Grekhov et al., RECOMBINATION PROPERTIES OF DIRECTLY BOUN DED SILICON STRUCTURES WITHREGULAR RELIEF ON THE INTERFACE, Pis'ma v Zurnal tehniceskoj fiziki, 22(23), 1996, pp. 14-18