Authors:
SYSOEV BI
BEZRYADIN NN
KOTOV GI
STRYGIN VD
Citation: Bi. Sysoev et al., INFLUENCE OF THE SURFACE-TREATMENT OF GALLIUM-ARSENIDE IN CHALCOGEN VAPORS ON THE PROPERTIES OF SCHOTTKY BARRIERS IN ME-GAAS STRUCTURES, Semiconductors, 27(1), 1993, pp. 69-71