Authors: SYSOEV BI BEZRYADIN NN KOTOV GI AGAPOV BL STRYGIN VD

Citation: Bi. Sysoev et al., PASSIVATION OF THE GAAS(100) SURFACE BY III2-VI3(110) GALLIUM CHALCOGENIDES, Semiconductors, 29(1), 1995, pp. 12-16

Authors: SYSOEV BI BEZRYADIN NN KOTOV GI STRYGIN VD

Citation: Bi. Sysoev et al., INFLUENCE OF THE SURFACE-TREATMENT OF GALLIUM-ARSENIDE IN CHALCOGEN VAPORS ON THE PROPERTIES OF SCHOTTKY BARRIERS IN ME-GAAS STRUCTURES, Semiconductors, 27(1), 1993, pp. 69-71