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Citation: D. Tsoukalas et al., REDUCTION OF THE REVERSE SHORT-CHANNEL EFFECT IN THICK SOI MOSFETS, IEEE electron device letters, 18(3), 1997, pp. 90-92

Authors: KOUVATSOS DN VOUTSAS AT HATALIS MK

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Authors: KOUVATSOS DN HATALIS MK

Citation: Dn. Kouvatsos et Mk. Hatalis, POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS FABRICATED AT REDUCED THERMAL BUDGETS BY UTILIZING FLUORINATED GATE OXIDATION, I.E.E.E. transactions on electron devices, 43(9), 1996, pp. 1448-1453

Authors: KOUVATSOS DN TSOUKALAS D SARCONA GT HATALIS MK STOEMENOS J

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Authors: TSAMIS C KOUVATSOS DN TSOUKALAS D

Citation: C. Tsamis et al., INFLUENCE OF N2O OXIDATION OF SILICON ON POINT-DEFECT INJECTION KINETICS IN THE HIGH-TEMPERATURE REGIME, Applied physics letters, 69(18), 1996, pp. 2725-2727

Authors: KOUVATSOS DN STEVIE FA JACCODINE RJ

Citation: Dn. Kouvatsos et al., INTERFACE STATE DENSITY REDUCTION AND EFFECT OF OXIDATION TEMPERATUREON FLUORINE INCORPORATION AND PROFILING FOR FLUORINATED METAL-OXIDE SEMICONDUCTOR CAPACITORS, Journal of the Electrochemical Society, 140(4), 1993, pp. 1160-1164