Authors: SCHLEIFER H KOWARIK O HOFFMANN K RECZEK W

Citation: H. Schleifer et al., MODELING THE FIELD SOFT ERROR RATE OF DRAMS BY VARYING THE CRITICAL CELL CHARGE, Microelectronics and reliability, 38(6-8), 1998, pp. 1139-1141

Authors: SCHULER F KOWARIK O KEITELSCHULZ D

Citation: F. Schuler et al., MEASUREMENT AND MODELING OF A NEW WIDTH DEPENDENCE OF NMOSFET DEGRADATION, Microelectronics and reliability, 36(11-12), 1996, pp. 1675-1678