Authors:
SCHLEIFER H
KOWARIK O
HOFFMANN K
RECZEK W
Citation: H. Schleifer et al., MODELING THE FIELD SOFT ERROR RATE OF DRAMS BY VARYING THE CRITICAL CELL CHARGE, Microelectronics and reliability, 38(6-8), 1998, pp. 1139-1141
Citation: F. Schuler et al., MEASUREMENT AND MODELING OF A NEW WIDTH DEPENDENCE OF NMOSFET DEGRADATION, Microelectronics and reliability, 36(11-12), 1996, pp. 1675-1678